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MT29F256G08CKAAAWP:A

Description
Flash, 32GX8, PDSO48, LEAD FREE, PLASTIC, TSOP1-48
Categorystorage    storage   
File Size3MB,164 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT29F256G08CKAAAWP:A Overview

Flash, 32GX8, PDSO48, LEAD FREE, PLASTIC, TSOP1-48

MT29F256G08CKAAAWP:A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTSOP1
package instructionLEAD FREE, PLASTIC, TSOP1-48
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density274877906944 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals48
word count34359738368 words
character code32000000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32GX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage2.7 V
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
typeMLC NAND TYPE
width12 mm
Base Number Matches1
Micron Confidential and Proprietary
64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous
NAND
Features
NAND Flash Memory
MT29F64G08CBAA[A/B], MT29F128G08C[E/F]AAA, MT29F128G08CFAAB,
MT29F256G08C[J/K/M]AAA, MT29F256G08CJAAB, MT29F512G08CUAAA,
MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB,
MT29F512G08CUCAB
Features
• Open NAND Flash Interface (ONFI) 2.2-compliant
1
• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
2
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
t
RC/
t
WC: 20ns (MIN)
– Up to asynchronous timing mode 5
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 75µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3.8ms (TYP)
• Operating Voltage Range
– V
CC
: 2.7–3.6V
– V
CCQ
: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 111).
• RESET (FFh) required as first command after pow-
er-on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware meth-
od for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: JESD47G compliant; see qualifi-
cation report
– Endurance: 3000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA
Notes:
1. The ONFI 2.2 specification is available at
www.onfi.org.
2. BGA devices up to Synchronous timing
mode 5. TSOP devices up to Synchronous
timing mode 4.
PDF: 09005aef83d2277a
L74A_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.

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