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W01

Description
SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size48KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
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W01 Overview

SILICON, BRIDGE RECTIFIER DIODE

W005 THRU W10
SINGLE-PHAS
E SILICON BRIDGE
Reverse Voltage -
50 to 1000 Volts
Forward Current -
1.5 Amperes
Features
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Mounting Position: Any
DIM ENSIONS
DIM
A
B
C
D
E
F
inches
Min.
0.355
0.265
1.20
1.27
0.180
0.028
Max.
0.395
0.305
-
-
0.220
0.032
Min.
9.0
6.73
30.5
32.3
4.6
0.71
mm
Max.
10.0
7.75
-
-
5.6
0.81
Note
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
W005
W01
W02
W04
W06
W08
W10
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
T
A
=25
Peak forward surge current, 8.3mS single
half sine-wave superimposed on rated load
1
2
t Rating for fusing (t<8.35ms)
Maximum forward voltage drop
per element at 1.0A peak
Maximum DC reverse current at rated
DC blocking voltage per element
Operating temperature range
Storage temperature range
T
A
=25
T
A
=100
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
2
t
V
F
I
R
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.5
50.0
5.0
1.0
10.0
1.0
-55 to +125
-55 to +150
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
A
2
t
Volt
A
mA
1

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