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SRM2B256SLCX10

Description
Standard SRAM, 32KX8, 180ns, CMOS, PDIP28
Categorystorage    storage   
File Size57KB,14 Pages
ManufacturerSeiko Epson Corporation
Download Datasheet Parametric Compare View All

SRM2B256SLCX10 Overview

Standard SRAM, 32KX8, 180ns, CMOS, PDIP28

SRM2B256SLCX10 Parametric

Parameter NameAttribute value
MakerSeiko Epson Corporation
Parts packaging codeDIP
package instruction,
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time180 ns
JESD-30 codeR-PDIP-T28
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize32KX8
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountNO
technologyCMOS
Temperature levelOTHER
Terminal formTHROUGH-HOLE
Terminal locationDUAL
SRM2B256SLMX
55/70/10
256K-BIT STATIC RAM
q
q
q
q
Wide Temperature Range
Extremely Low Standby Current
Access Time 100ns (2.7V) 55ns (4.5V)
32,768 Words
×
8-Bit Asynchronous
s
DESCRIPTION
The SRM2B256SLMX is a low voltage operating 32,768 words
×
8-bit asynchronous, static, random
access memory fabricated using an advanced CMOS technology. Its very low standby power con-
sumption makes it ideal for applications requiring non-volatile storage with back-up batteries, and
–25 to 85
°
C operating temperature range makes it ideal for industrial use. The asynchronous and
static nature of the memory requires no external clock or refresh circuit. 3-state output ports allow easy
expansion of memory capacity. These features make the SRM2B256SLMX usable for a wide range
of applications, from microprocessor systems to terminal devices.
s
FEATURES
Wide temperature range . . . . . . . . . . . –25 to 85
°
C
Extended supply voltage range. . . . . . 2.7 to 5.5V
Fast access time . . . . . . . . . . . . . . . . . 100ns (3V
±
10%)
55ns (5V
±
10%)
Extremely low standby current . . . . . . SL Version
Completely static. . . . . . . . . . . . . . . . . No clock required
3-state output
Battery back-up operation
Package . . . . . . . . . . . . . . . . . . . . . . . SRM2B256SLCX . . . . . . . . . . . . . . . DIP2-28pin (plastic)
SRM2B256SLMX . . . . . . . . . . . . . . SOP2-28pin (plastic)
SRM2B256SLTMX . . . . . . . . . . . TSOP (I)-28pin (plastic)
SRM2B256SLRMX. . . . . . . . TSOP (I)-28pin-R1 (plastic)
000-97-MEM-1.0
S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238
57

SRM2B256SLCX10 Related Products

SRM2B256SLCX10 SRM2B256SLRMX10 SRM2B256SLRMX55 SRM2B256SLTMX70 SRM2B256SLMX10 SRM2B256SLMX70
Description Standard SRAM, 32KX8, 180ns, CMOS, PDIP28 Standard SRAM, 32KX8, 180ns, CMOS, PDSO28 Standard SRAM, 32KX8, 100ns, CMOS, PDSO28 Standard SRAM, 32KX8, 120ns, CMOS, PDSO28 Standard SRAM, 32KX8, 180ns, CMOS, PDSO28 Standard SRAM, 32KX8, 120ns, CMOS, PDSO28
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 180 ns 180 ns 100 ns 120 ns 180 ns 120 ns
JESD-30 code R-PDIP-T28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28
memory density 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1
Number of terminals 28 28 28 28 28 28
word count 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
character code 32000 32000 32000 32000 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -25 °C -25 °C -25 °C -25 °C -25 °C -25 °C
organize 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
surface mount NO YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level OTHER OTHER OTHER OTHER OTHER OTHER
Terminal form THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maker Seiko Epson Corporation - - Seiko Epson Corporation Seiko Epson Corporation Seiko Epson Corporation
Parts packaging code DIP TSOP TSOP - SOIC SOIC
Contacts 28 28 28 - 28 28
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