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Datasheet> All Categories > Discrete semiconductor> The transistor> UNR1210S
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UNR1210S

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size334KB，14 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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UNR1210S Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN

UNR1210S Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)290
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz

UNR1210S Preview

Transistors with built-in Resistor
UNR121x Series
(UN121x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
(0.4)
6.9
±0.1
(1.5)
(1.5)
3.5
±0.1
2.5
±0.1
(1.0)
(1.0)
2.0
±0.2
2.4
±0.2
1.0
±0.1
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR1210
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
UNR121D
UNR121E
UNR121F
UNR121K
UNR121L
(UN1210)
(UN1211)
(UN1212)
(UN1213)
(UN1214)
(UN1215)
(UN1216)
(UN1217)
(UN1218)
(UN1219)
(UN121D)
(UN121E)
(UN121F)
(UN121K)
(UN121L)
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
3
(2.5)
2
(2.5)
1
1.25
±0.05
■
Resistance by Part Number
(0.85)
0.55
±0.1
0.45
±0.05
1: Base
2: Collector
3: Emitter
M-A1 Package
Internal Connection
R
1
B
R
2
E
C
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
400
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003
SJH00003BED
4.1
±0.2
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board
R 0.9
R 0.7
4.5
±0.1
■
Features
1
UNR121x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR1211
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
Min
50
50
0.1
0.5
0.5
0.2
0.1
0.01
1.0
1.5
2.0
h
FE
V
CE
=
10 V, I
C
=
5 mA
35
60
80
160
30
20
V
CE(sat)
V
OH
V
OL
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 kΩ
f
T
R
1
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
−30%
80
10
22
47
4.7
0.51
1
R
1
/R
2
0.8
0.17
0.08
1.0
0.21
0.1
4.7
2.14
0.47
2.13
1.2
0.25
0.12
+30%
MHz
kΩ
4.9
0.2
0.25
V
V
V
460
Typ
Max
Unit
V
V
µA
µA
mA
cutoff current UNR1212/1214/121D/121E
(Collector open) UNR1213
UNR1210/1215/1216/1217
UNR121F/121K
UNR1219
UNR1218/121L
Forward current UNR1211
transfer ratio
UNR1212/121E
UNR1213/1214
UNR1210
*
/1215
*
/1216
*
/
1217
*
UNR1219/121D/121F
UNR1218/121K/121L
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR1213/121K
UNR121D
UNR121E
Transition frequency
Input resistance UNR1211/1214/1215/121K
UNR1212/1217
UNR1210/1213/121D/121E
UNR1216/121F/121L
UNR1218
UNR1219
Resistance ratio UNR1211/1212/1213/121L
UNR1214
UNR1218/1219
UNR121D
UNR121E
UNR121F
UNR121K
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification (UNR1110/1115/1116/1117)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
SJH00003BED
UNR121x Series
Common characteristics chart
P
T
T
a
500
Total power dissipation P
T
(mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature T
a
(°C)
Characteristics charts of UNR1210
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
60
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
V
CE(sat)
I
C
100
h
FE
I
C
400
V
CE
=
10 V
I
C
/ I
B
=
10
50
Forward current transfer ratio h
FE
Collector current I
C
(mA)
10
300
T
a
=
75°C
25°C
200
−25°C
100
40
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
30
0.3 mA
1
T
a
=
75°C
25°C
0.1
−25°C
0.01
0.1
20
10
0
0
1
10
100
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
10
3
10
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00003BED
3
UNR121x Series
Characteristics charts of UNR1211
I
C
V
CE
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
160
Collector current I
C
(mA)
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
80
0.3 mA
1
25°C
0.1
−25˚C
200
25°C
100
−25°C
0.2 mA
40
T
a
=
75°C
0.1 mA
0
0
2
4
6
8
10
12
0.01
0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
Input voltage V
IN
(V)
10
3
10
3
10
2
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR1212
I
C
V
CE
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
120
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
=
10 V
160
Collector current I
C
(mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
80
0.3 mA
1
T
a
=
75°C
200
25°C
−25°C
25°C
0.1
−25°C
40
0.2 mA
100
0.1 mA
0
0
2
4
6
8
10
12
0.01
0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
4
SJH00003BED
UNR121x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
10
3
10
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR1213
I
C
V
CE
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
160
Forward current transfer ratio h
FE
Collector current I
C
(mA)
120
10
300
T
a
=
75°C
25°C
−25°C
1
200
40
0.2 mA
25°C
0.1
−25°C
0.01
0.1
T
a
=
75°C
100
0.1 mA
0
0
2
4
6
8
10
12
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
Input voltage V
IN
(V)
10
3
10
3
10
2
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00003BED
5
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UNR1210S UNR1217R UNR1217S UNR121KQ UNR1210Q UNR1215Q UNR1215S UNR1215R UNR1216Q UNR1216R
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN Transistor Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN
Maker Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 , IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
Contacts 3 3 3 - 3 3 3 3 3 3
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR - BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V - 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 290 210 290 - 160 160 290 210 160 210
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 - R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1 - 1 1 1 1 1 1
Number of terminals 3 3 3 - 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE - IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type NPN NPN NPN - NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.4 W 0.4 W 0.4 W - 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO - NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON - SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz - 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz

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In XP, fat16/32 should support long file names, but after I created a file name bb.txt on a 64M USB disk, I used winhex to view fdt and found that there were only short file name directory entries. An...
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