FGP20B thru FGP20D
Vishay Semiconductors
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
I
R
T
j
max.
2.0 A
100 V to 200 V
50 A
35 ns
0.95 V
2.0 µA
175 °C
®
ted*
n
Pate
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
DO-204AC (DO-15)
Features
•
•
•
•
•
•
•
•
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Maximum RMS voltage
Maximum DC blocking voltage
N
ew
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Pr
od
uc
t
Mechanical Data
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
FGP20B
100
70
100
FGP20C
150
105
150
2.0
50
- 65 to + 175
Case:
DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
FGP20D
200
140
200
Unit
V
V
V
A
A
°C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
L
= 75 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Document Number 88877
10-Aug-05
www.vishay.com
1
FGP20B thru FGP20D
Vishay Semiconductors
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum instantaneous forward
voltage
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Test condition
at 2.0 A
T
A
= 25 °C
T
A
= 100 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
Symbol
V
F
I
R
t
rr
C
J
FGP20B
FGP20C
0.95
2.0
50
35
45
FGP20D
Unit
V
µA
ns
pF
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical thermal resistance
(1, 2)
Notes:
(1) Thermal resistance from junction to ambient 0.375" (9.5 mm) lead length mounted on P.C.B. with 0.5 x 0.5" (12 x 12 mm) copper pads.
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsinks
Symbol
R
θJA
R
θJL
FGP20B
FGP20C
60
20
FGP20D
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
3.0
60
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
50
40
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
2.0
30
1.0
P.C.B.
with
12 x 12 mm
Copper Pads
0
0
25
50
75
100
125
150
175
20
10
0
1
10
100
Lead Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88877
10-Aug-05
FGP20B thru FGP20D
Vishay Semiconductors
100
1000
T
j
= 175 °C
Instantaneous Forward Current (A)
10
T
j
= 150 °C
Junction Capacitance (pF)
1.4
100
1
T
j
= 125 °C
0.1
T
j
= 25 °C
0.01
0.2
0.4
0.6
0.8
1
1.2
T
J
= 25 °C
Pulse
Width
= 300
µs
1% Duty Cycle
10
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
Instantantaneous Reverse Leakage Current (µA)
100
T
j
= 175 °C
10
T
j
= 150 °C
T
j
= 125 °C
1
0.1
0.01
T
j
= 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Leakage Characteristics
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88877
10-Aug-05
www.vishay.com
3
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