BAV16W datasheet, PDF - EEWORLD Datasheet

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BAV16W: Description0.15A,75V,Surface Mount Small Signal Switching Diodes, Single, 75V, 0.15A, 1.25V, 0.15A, 2A, 1uA; File Size173KB，3 Pages; ManufacturerGalaxy Microelectronics

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BAV16W Overview

0.15A,75V,Surface Mount Small Signal Switching Diodes, Single, 75V, 0.15A, 1.25V, 0.15A, 2A, 1uA

BAV16W Parametric

Parameter Name	Attribute value
Maker	Galaxy Microelectronics
Parts packaging code	SOD-123
package instruction	R-PDSO-G2
Reach Compliance Code	unknown
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.35 W
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
VRRM (V) max	75
IF (A) max	0.15
VF (V) max	1.25
Condition1_IF (A)	0.15
IFSM (A) max	2
IR (uA) max	1
Condition2_VR (V)	75
trr (ns) max	4
AEC Qualified	No
Maximum operating temperature	150
Minimum operating temperature	-65
MSL level	1
Is it lead-free?	Yes
Comply with Reach	Yes
RoHS compliant	Yes
ECCN code	EAR99
Package Outlines	SOD-123

BAV16W Preview

Production specification

Silicon Epitaxial Planar Diode

FEATURES



Fast Switching Speed:trr=4ns(Typ)

Surface Mount Package Ideally Suited For

Automatic Insertion



For General Purpose Switching Applications

High Conductance

Available in Lead Free Version

BAV16W

Pb

Lead-free

APPLICATIONS



Surface mount fast switching diode

SOD-123

ORDERING INFORMATION

Type No.

BAV16W

Marking

T6

Package Code

SOD-123

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Characteristic

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Reverse Voltage

RMS Reverse Voltage

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current @t=1.0 μs

@t=1.0 s

Power Dissipation

Thermal Resistance Junction to Ambient Air

Operating and Storage Temperature Rage

Symbol

V

RM

V

RRM

V

RWM

V

R

V

R(RMS)

I

o

I

FSM

P

d

R

θJA

T

j

,T

STG

Value

100

75

53

150

2.0

1.0

350

375

-65 to +150

Unit

V

mA

A

mW

℃

/W

℃

A009

Rev.A

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Production specification

Silicon Epitaxial Planar Diode

BAV16W

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Symbol

V

(BR)R

Min

75

Max

-

0.715

0.855

1.0

1.25

-

1.0

25

2.0

4.0

Unit

V

Test Condition

I

R

=1.0μA

I

F

=1mA

I

F

=10mA

I

F

=50mA

I

F

=150mA

V

R

=75V

V

R

=20V

V

R

=0,f=1.0MHz

I

F

=I

R

=10mA,

I

rr

=0.1×I

R

,R

L

=100Ω

Forward Voltage

V

F

V

Reverse Current

Capacitance between

terminals

Reverse Recovery Time

I

R

C

T

t

rr

μA

nA

pF

ns

TYPICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

A009

Rev.A

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Production specification

Silicon Epitaxial Planar Diode

PACKAGE OUTLINE

Plastic surface mounted package

BAV16W

SOD-123

K

B

C

SOD-123

Dim

A

Min

1.45

2.55

1

0.5

0.25

0.02

0.05

3.55

Max

1.75

2.85

1.3

0.6

0.45

0.10

0.15

3.85

B

C

H

D

E

H

E

J

K

All Dimensions in mm

SOLDERING FOOTPRINT

0.91

1.22

2.36

4.19

Unit：mm

PACKAGE INFORMATION

Device

BAV16W

Package

SOD-123

Shipping

3000/Tape&Reel

A009

Rev.A

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