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JANTXV1N941B

Description
Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35,
CategoryDiscrete semiconductor    diode   
File Size113KB,2 Pages
ManufacturerCompensated Devices Inc.
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JANTXV1N941B Overview

Zener Diode, 11.7V V(Z), 4.96%, 0.5W, Silicon, DO-35,

JANTXV1N941B Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
Reach Compliance Codeunknown
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
GuidelineMIL-19500/157
Nominal reference voltage11.7 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Voltage temperatureCoeff-Max1.17 mV/°C
Maximum voltage tolerance4.96%
• 1N941B, 1N943B, 1N944B AND 1N945B AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/157
• 1N941B-1, 1N943B-1, 1N944B-1 AND 1N945B-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/157
• 11.7 VOLT NOMINAL ZENER VOLTAGE
• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
• METALLURGICALLY BONDED
1N941 thru 1N945B
and
1N941B-1 thru 1N945B-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
l
R
= 15
µ
A @ 25°C & V
R
= 8 Vdc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
JEDEC
TYPE
NUMBER
ZENER
VOLTAGE
v @I
z
ZT
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
VOLTAGE
TEMPERATURE
ZENER
TEMPERATURE
RANGE
IMPEDANCE
STABILITY
ZZT
∆V
ZT
MAXIMUM
(Note 1)
(Note 2)
mV
88
181
239
44
90
120
18
36
47
9
18
24
4
9
12
°C
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +100
-55 to +150
0 to + 75
-55 to +150
-55 to +150
EFFECTIVE
TEMPERATURE
COEFFICIENT
VOLTS
1N941
1N941A
1N941B
1N942
1N942A
1N942B
1N943
1N943A
1N943B
1N944
1N944A
1N944B
1N945
1N945A
1N945B
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12—12.28
11.12 -12.28
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
% / °C
0.01
0.01
0.01
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
0.0005
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to
10% of lZT.
NOTE 2
The maximum allowable change observed over the entire temperature range i.e., the
diode voltage will not exceed the specified mV at any discrete temperature between
the established limits, per JEDEC standard No.5.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
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