BSS138BK
Nch 60V 400mA Small Signal MOSFET
Datasheet
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Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
60V
0.68Ω
±400mA
350mW
SOT-23
SST3
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Inner circuit
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Features
1) Very fast switching
2) Ultra low voltage drive (2.5V drive)
3) ESD protection up to 2kV (HBM)
4) Pb-free lead plating ; RoHS compliant.
5) Halogen Free.
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Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Quantity (pcs)
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Application
Type
Switching circuits
Low-side loadswitch
Taping code
Relay driver
Marking
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
Symbol
V
DSS
I
D
I
DP*1
V
GSS
P
D*2
P
D*3
T
j
T
stg
Embossed
Tape
180
8
3000
T116
VE
Value
60
±400
±1.4
±20
350
200
150
-55 to +150
Unit
V
mA
A
V
mW
mW
℃
℃
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20191029 - Rev.001
BSS138BK
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Thermal resistance
Datasheet
Parameter
Symbol
R
thJA*2
R
thJA*3
Values
Min.
-
-
Typ.
-
-
Max.
357
625
Unit
℃
/W
℃
/W
Thermal resistance, junction - ambient
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Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
60
-
-
-
0.8
-
-
-
-
0.5
Typ.
-
59.9
-
-
-
-4.1
0.49
0.58
1.0
-
Max.
-
-
1
±10
2.0
-
0.68
0.81
4.0
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
mV/
℃
μA
μA
V
mV/
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 10μA
Δ
V
GS(th)
I
D
= 10μA
ΔT
j
referenced to 25
℃
V
GS
= 10V, I
D
= 400mA
R
DS(on)*4
V
GS
= 4.5V, I
D
= 400mA
V
GS
= 2.5V, I
D
= 10mA
|Y
fs
|
*4
V
DS
= 10V, I
D
= 400mA
Ω
S
*1 Pw ≤ 10μs, Duty cycle ≤ 1%
*2 Mounted on a ceramic board (30mm×30mm×0.8mm)
*3 Mounted on a FR4 board (20mm×12mm×0.8mm
，
Cu pad=0.8m
㎡
)
*4 Pulsed
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20191029 - Rev.001
BSS138BK
Datasheet
l
Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*4
t
r*4
t
d(off)*4
t
f*4
Conditions
Min.
V
GS
= 0V
V
DS
= 30V
f = 1MHz
V
DD
⋍
30V,V
GS
= 10V
Unit
Typ.
47
10
5
4.6
5.2
17
22
Max.
-
-
-
-
-
ns
-
-
-
-
pF
-
-
-
-
-
I
D
= 200mA
R
L
⋍
150Ω
R
G
= 10Ω
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S
I
SP*1
V
SD*4
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= 290mA
-
-
-
Typ.
-
-
-
Max.
0.29
1.4
1.2
A
A
V
Unit
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© 2019 ROHM Co., Ltd. All rights reserved.
3/11
20191029 - Rev.001
BSS138BK
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2019 ROHM Co., Ltd. All rights reserved.
4/11
20191029 - Rev.001
BSS138BK
Datasheet
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Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
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© 2019 ROHM Co., Ltd. All rights reserved.
5/11
20191029 - Rev.001
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