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SI4133W-BM

Description
PLL Frequency Synthesizer, MLP-28
CategoryAnalog mixed-signal IC    The signal circuit   
File Size536KB,32 Pages
ManufacturerSilicon Laboratories Inc
Download Datasheet Parametric View All

SI4133W-BM Overview

PLL Frequency Synthesizer, MLP-28

SI4133W-BM Parametric

Parameter NameAttribute value
MakerSilicon Laboratories Inc
package instructionHVQCCN,
Reach Compliance Codeunknown
Analog Integrated Circuits - Other TypesPLL FREQUENCY SYNTHESIZER
JESD-30 codeS-XQCC-N28
length5 mm
Number of functions1
Number of terminals28
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Package body materialUNSPECIFIED
encapsulated codeHVQCCN
Package shapeSQUARE
Package formCHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
Maximum seat height0.9 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
Temperature levelOTHER
Terminal formNO LEAD
Terminal pitch0.5 mm
Terminal locationQUAD
width5 mm

SI4133W-BM Preview

Si4133W
RF S
Y N T H E S I Z E R W I T H
I
N T E G R A T E D
V C O
S
F O R
W- CD M A
A N D
G S M / U M T S W
I R E L E S S
C
O M M U N I C A T I O N S
Features
Dual RF synthesizers
RF1: 2.3 GHz to 2.6 GHz
RF2: 750 MHz to 1.7 GHz
IF synthesizer
IF: 62.5 MHz to 1.0 GHz
Integrated VCOs, loop filters,
dividers, and phase detectors
Minimal external components
Continuous operation over a
wide temperature range
Fast settling time: 200
µsec
Low phase noise
5 µA standby current
28-lead MLP, 5 x 5 mm
Ordering Information:
See page 28.
Applications
Single-mode W-CDMA wireless
handsets, terminals, and
modems
Dual-mode GSM/UMTS wireless
handsets, terminals, and
modems
GNDR
RFLD
Pin Assignments
Si4133W-BM
SDATA
IFOUT
GNDR
SENB
SCLK
GNDI
VDDI
Description
The Si4133W is a monolithic integrated circuit that performs RF and IF
synthesis for GSM/GPRS and W-CDMA wireless communications. In dual-
mode GSM/UMTS handsets, the Si4133W meets demanding requirements
for very low phase noise and fast settling time for both modes. The Si4133W
integrates three complete phase-locked loops (PLLs) on a single die
including VCOs, loop filters, reference and VCO dividers, and phase
detectors. Dividers and powerdown settings are programmable through a
three-wire serial interface.
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
RFLC
GNDR
NC
GNDR
GNDR
RFOUT
AUXOUT
GNDR
GNDR
PW DNB
Functional Block Diagram
Patents pending
XIN
Reference
Am plifier
Power
Down
Control
÷
R
Phase
Detector
RF1
PW DNB
÷
N
÷
R
RFOUT
SDATA
SCLK
SENB
Serial
Interface
22-bit
Data
Register
Phase
Detector
RF2
RFLC
RFLD
÷
N
÷
R
AUXOUT
Test
Mux
Phase
Detector
IF
IFDIV
IFOUT
÷
N
IFLA
IFLB
Rev. 1.1 9/02
Copyright © 2002 by Silicon Laboratories
Si4133W-DS11
GNDD
VDDR
Si4133W
2
Rev. 1.1
Si4133W
T
A B L E O F
C
O N T E N TS
Section
Page
4
16
16
16
17
18
18
19
19
19
20
1
27
28
29
30
32
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Setting the VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF and IF Outputs (RFOUT and IFOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Down Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Descriptions: Si4133W-BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Outline: Si4133W-BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Rev. 1.1
3
Si4133W
Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Ambient Temperature
Supply Voltage
Supply Voltages Difference
Symbol
T
A
V
DD
V
(V
DDR
– V
DDD
),
(V
DDI
– V
DDD
)
Test Condition
Min
–25
2.7
–0.3
Typ
25
3.3
Max
85
3.6
0.3
Unit
°C
V
V
Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25°C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
DC Supply Voltage
Input Current
3
Input Voltage
3
Storage Temperature Range
Symbol
V
DD
I
IN
V
IN
T
STG
Value
–0.5 to 4.0
±10
–0.3 to V
DD
+0.3
–55 to 150
Unit
V
mA
V
°C
Note:
1.
Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3.
For signals SCLK, SDATA, SENB, PWDNB and XIN.
4
Rev. 1.1
Si4133W
Table 3. DC Characteristics
(V
DD
= 2.7 to 3.6 V, T
A
= –25 to 85 °C)
Parameter
Typical Supply Current
1
RF1 Mode Supply Current
1
RF2 Mode Supply Current
1
IF Mode Supply Current
1
Standby Current
High Level Input Voltage
2
Low Level Input Voltage
2
High Level Input Current
2
Low Level Input Current
2
High Level Output Voltage
3
Low Level Output Voltage
3
Notes:
1.
RF1 = 2.4 GHz, RF2 = 1.6 GHz, IFOUT = 800 MHz, LPWR = 0.
2.
For signals SCLK, SDATA, SENB, and PWDNB.
3.
For signal AUXOUT.
Symbol
Test Condition
RF1 and IF operating
Min
Typ
23
15
12
9
5
Max
27.5
18
15
11.5
0.3 V
DD
10
10
0.4
Unit
mA
mA
mA
mA
µA
V
V
µA
µA
V
V
PWDNB = 0
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
V
IH
=
3.6 V,
V
DD
= 3.6 V
V
IL
=
0 V,
V
DD
=
3.6 V
I
OH
= –500 µA
I
OH
= 500 µA
0.7 V
DD
–10
–10
V
DD
–0.4
Rev. 1.1
5
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