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BUK9608-55A_15

Description
N-channel TrenchMOS logic level FET
File Size202KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9608-55A_15 Overview

N-channel TrenchMOS logic level FET

D2
PA
K
BUK9608-55A
N-channel TrenchMOS logic level FET
Rev. 04 — 31 January 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
[1]
Min
-
-
-
-
-
-
Typ
-
-
-
6.4
-
6.8
Max Unit
55
75
253
7.5
8.5
8
V
A
W
mΩ
mΩ
mΩ
Static characteristics
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