EEWORLDEEWORLDEEWORLD

Part Number

Search

PMR290XN,115

Description
N-channel TrenchMOS extremely low level FET SC-75 3-Pin
CategoryDiscrete semiconductor    The transistor   
File Size88KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PMR290XN,115 Overview

N-channel TrenchMOS extremely low level FET SC-75 3-Pin

PMR290XN,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-75
package instructionPLASTIC, SC-75, 3 PIN
Contacts3
Manufacturer packaging codeSOT416
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)0.97 A
Maximum drain current (ID)0.97 A
Maximum drain-source on-resistance0.35 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.53 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

PMR290XN,115 Preview

PMR290XN
N-channel
µTrenchMOS™
extremely low level FET
M3D173
Rev. 01 — 3 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
Surface mounted package
s
Low on-state resistance
s
Footprint 63% smaller than SOT23
s
Low threshold voltage.
1.3 Applications
s
Driver circuits
s
Switching in portable appliances.
1.4 Quick reference data
s
V
DS
20 V
s
P
tot
0.53 W
s
I
D
0.97 A
s
R
DSon
350 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT416 (SC-75), simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
g
1
Top view
2
MBK090
MBB076
Simplified outline
3
Symbol
d
s
SOT416 (SC-75)
3. Ordering information
Table 2:
Ordering information
Package
Name
PMR290XN
SC-75
Description
Plastic surface mounted package; 3 leads
Version
SOT416
Type number
Philips Semiconductors
PMR290XN
µTrenchMOS™
extremely low level FET
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
sp
= 25
°C
peak source (diode forward) current T
sp
= 25
°C;
pulsed; t
p
10
µs
T
sp
= 25
°C;
V
GS
= 4.5 V;
Figure 2
and
3
T
sp
= 100
°C;
V
GS
= 4.5 V;
Figure 2
T
sp
= 25
°C;
pulsed; t
p
10
µs;
Figure 3
T
sp
= 25
°C;
Figure 1
Conditions
25
°C ≤
T
j
150
°C
25
°C ≤
T
j
150
°C;
R
GS
= 20 kΩ
Min
-
-
-
-
-
-
-
−55
−55
-
-
Max
20
20
±12
0.97
0.61
1.94
0.53
+150
+150
0.44
0.88
Unit
V
V
V
A
A
A
W
°C
°C
A
A
Source-drain diode
9397 750 12663
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
2 of 12
Philips Semiconductors
PMR290XN
µTrenchMOS™
extremely low level FET
120
Pder
(%)
80
03aa17
120
Ider
(%)
80
03aa25
40
40
0
0
50
100
150
Tsp (°C)
200
0
0
50
100
150
200
Tsp (
°
C)
P
tot
P
der
=
----------------------
×
100%
-
P
°
tot
(
25 C
)
I
D
I
der
=
-------------------
×
100%
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
10
ID
(A)
Limit RDSon = VDS / ID
1
100
µ
s
tp = 10
µ
s
03an33
1 ms
DC
10-1
10 ms
100 ms
10-2
10-1
1
10
VDS (V)
102
T
sp
= 25
°C;
I
DM
is single pulse; V
GS
= 4.5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12663
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
3 of 12
Philips Semiconductors
PMR290XN
µTrenchMOS™
extremely low level FET
5. Thermal characteristics
Table 4:
R
th(j-sp)
Thermal characteristics
Conditions
Min
-
Typ
-
Max
235
Unit
K/W
thermal resistance from junction to solder point
Figure 4
Symbol Parameter
5.1 Transient thermal impedance
103
03an29
Zth(j-sp)
(K/W)
δ
= 0.5
102
0.2
0.1
0.05
0.02
single pulse
10
10-4
10-3
10-2
10-1
1
tp
T
10
t
P
δ
=
tp
T
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 12663
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
4 of 12
Philips Semiconductors
PMR290XN
µTrenchMOS™
extremely low level FET
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 1
µA;
V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 0.25 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 150
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 20 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 150
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
V
GS
=
±12
V; V
DS
= 0 V
V
GS
= 4.5 V; I
D
= 0.2 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 150
°C
V
GS
= 2.5 V; I
D
= 0.1 A;
Figure 7
and
8
Dynamic characteristics
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
S
= 0.3 A; V
GS
= 0 V;
Figure 12
V
DD
= 10 V; R
L
= 10
Ω;
V
GS
= 4.5 V; R
G
= 6
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz;
Figure 11
I
D
= 1 A; V
DD
= 10 V; V
GS
= 4.5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
-
0.72
0.18
0.18
34
12
8
5
11
11
6
0.8
-
-
-
-
-
-
-
-
-
-
1.2
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
-
-
-
290
464
460
350
560
550
mΩ
mΩ
mΩ
-
-
-
-
-
10
1
100
100
µA
µA
nA
0.5
0.35
-
1
-
-
1.5
-
1.8
V
V
V
20
18
-
-
-
-
V
V
Conditions
Min
Typ
Max
Unit
Source-drain diode
9397 750 12663
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
5 of 12
Design of vehicle control platform based on STR750 microcontroller
The platform can manage vehicle control systems, navigation systems, audio and other entertainment equipment, and monitor vehicle operation and environmental information. By making reasonable use of v...
shunv424 Embedded System
Xunwei 4412 Development Board Linux Driver Tutorial - Bus_Device_Driver Registration Process Detailed Explanation
[align=left]Video download address:[/align][align=left]Driver registration:[url]http://pan.baidu.com/s/1i34HcDB[/url][/align][align=left]Device registration: [url]http://pan.baidu.com/s/1kTlGkcR[/url]...
topeet ARM Technology
Why is my paper title so new...
Why is my thesis topic so new... Topic: Light Bulb Photometry Controller Design, I can't find any relevant information on the Internet, damn... There are plenty of temperature control materials for my...
shy117301 MCU
Keywords for CCS interrupt functions
From "__irq" to "interrupt": #pragma INTERRUPT(int_handler[, interrupt_type] );interrupt void int_handler() { unsigned int flags; ... }...
danqingshang Embedded System
How long can the high growth momentum of China's communication network continue? ? ? ?
In recent years, the market size of my country's communication products (including data communication, access network, program-controlled switching, optical transmission, optical fiber and cable, and ...
liudong2008lldd RF/Wirelessly
Still talking about air purifiers, value return
[i=s]This post was last edited by lidonglei1 on 2014-12-11 13:27[/i] I saw the news "Xiaomi air purifier plagiarism scandal: "the plagiarized party" Balmuda responded" on Phoenix.com today. I was curi...
lidonglei1 Integrated technical exchanges

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2231  2001  190  2411  845  45  41  4  49  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号