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PMR290XN,115

Description
N-channel TrenchMOS extremely low level FET SC-75 3-Pin
CategoryDiscrete semiconductor    The transistor   
File Size204KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

PMR290XN,115 Overview

N-channel TrenchMOS extremely low level FET SC-75 3-Pin

PMR290XN,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSC-75
package instructionPLASTIC, SC-75, 3 PIN
Contacts3
Manufacturer packaging codeSOT416
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)0.97 A
Maximum drain current (ID)0.97 A
Maximum drain-source on-resistance0.35 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.53 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

PMR290XN,115 Preview

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PMR290XN
N-channel
µTrenchMOS™
extremely low level FET
M3D173
Rev. 01 — 3 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
Surface mounted package
s
Low on-state resistance
s
Footprint 63% smaller than SOT23
s
Low threshold voltage.
1.3 Applications
s
Driver circuits
s
Switching in portable appliances.
1.4 Quick reference data
s
V
DS
20 V
s
P
tot
0.53 W
s
I
D
0.97 A
s
R
DSon
350 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT416 (SC-75), simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
g
1
Top view
2
MBK090
MBB076
Simplified outline
3
Symbol
d
s
SOT416 (SC-75)
3. Ordering information
Table 2:
Ordering information
Package
Name
PMR290XN
SC-75
Description
Plastic surface mounted package; 3 leads
Version
SOT416
Type number
Philips Semiconductors
PMR290XN
µTrenchMOS™
extremely low level FET
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
sp
= 25
°C
peak source (diode forward) current T
sp
= 25
°C;
pulsed; t
p
10
µs
T
sp
= 25
°C;
V
GS
= 4.5 V;
Figure 2
and
3
T
sp
= 100
°C;
V
GS
= 4.5 V;
Figure 2
T
sp
= 25
°C;
pulsed; t
p
10
µs;
Figure 3
T
sp
= 25
°C;
Figure 1
Conditions
25
°C ≤
T
j
150
°C
25
°C ≤
T
j
150
°C;
R
GS
= 20 kΩ
Min
-
-
-
-
-
-
-
−55
−55
-
-
Max
20
20
±12
0.97
0.61
1.94
0.53
+150
+150
0.44
0.88
Unit
V
V
V
A
A
A
W
°C
°C
A
A
Source-drain diode
9397 750 12663
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
2 of 12
Philips Semiconductors
PMR290XN
µTrenchMOS™
extremely low level FET
120
Pder
(%)
80
03aa17
120
Ider
(%)
80
03aa25
40
40
0
0
50
100
150
Tsp (°C)
200
0
0
50
100
150
200
Tsp (
°
C)
P
tot
P
der
=
----------------------
×
100%
-
P
°
tot
(
25 C
)
I
D
I
der
=
-------------------
×
100%
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
10
ID
(A)
Limit RDSon = VDS / ID
1
100
µ
s
tp = 10
µ
s
03an33
1 ms
DC
10-1
10 ms
100 ms
10-2
10-1
1
10
VDS (V)
102
T
sp
= 25
°C;
I
DM
is single pulse; V
GS
= 4.5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12663
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
3 of 12
Philips Semiconductors
PMR290XN
µTrenchMOS™
extremely low level FET
5. Thermal characteristics
Table 4:
R
th(j-sp)
Thermal characteristics
Conditions
Min
-
Typ
-
Max
235
Unit
K/W
thermal resistance from junction to solder point
Figure 4
Symbol Parameter
5.1 Transient thermal impedance
103
03an29
Zth(j-sp)
(K/W)
δ
= 0.5
102
0.2
0.1
0.05
0.02
single pulse
10
10-4
10-3
10-2
10-1
1
tp
T
10
t
P
δ
=
tp
T
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 12663
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
4 of 12
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