PMR370XN
N-channel
µTrenchMOS™
extremely low level FET
M3D173
Rev. 01 — 3 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s
Surface mounted package
s
Low on-state resistance
s
Footprint 63% smaller than SOT23
s
Low threshold voltage.
1.3 Applications
s
Driver circuits
s
Switching in portable appliances.
1.4 Quick reference data
s
V
DS
≤
30 V
s
P
tot
≤
0.53 W
s
I
D
≤
0.84 A
s
R
DSon
≤
440 mΩ.
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT416 (SC-75), simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
g
1
Top view
2
MBK090
MBB076
Simplified outline
3
Symbol
d
s
SOT416 (SC-75)
3. Ordering information
Table 2:
Ordering information
Package
Name
PMR370XN
SC-75
Description
Plastic surface mounted package; 3 leads
Version
SOT416
Type number
Philips Semiconductors
PMR370XN
N-channel
µTrenchMOS™
extremely low level FET
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
sp
= 25
°C
peak source (diode forward) current T
sp
= 25
°C;
pulsed; t
p
≤
10
µs
T
sp
= 25
°C;
V
GS
= 4.5 V;
Figure 2
and
3
T
sp
= 100
°C;
V
GS
= 4.5 V;
Figure 2
T
sp
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
sp
= 25
°C;
Figure 1
Conditions
25
°C ≤
T
j
≤
150
°C
25
°C ≤
T
j
≤
150
°C;
R
GS
= 20 kΩ
Min
-
-
-
-
-
-
-
−55
−55
-
-
Max
30
30
±12
0.84
0.53
1.68
0.53
+150
+150
0.44
0.88
Unit
V
V
V
A
A
A
W
°C
°C
A
A
Source-drain diode
9397 750 12664
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
2 of 12
Philips Semiconductors
PMR370XN
N-channel
µTrenchMOS™
extremely low level FET
120
Pder
(%)
80
03aa17
120
Ider
(%)
80
03aa25
40
40
0
0
50
100
150
Tsp (°C)
200
0
0
50
100
150
200
Tsp (
°
C)
P
tot
P
der
=
----------------------
×
100%
-
P
°
tot
(
25 C
)
I
D
I
der
=
-------------------
×
100%
I
°
D
(
25 C
)
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
10
03an17
ID
(A)
Limit RDSon = VDS / ID
tp = 10
µ
s
1
100
µ
s
DC
10-1
1 ms
10 ms
100 ms
10-2
10-1
1
10
VDS (V)
102
T
sp
= 25
°C;
I
DM
is single pulse; V
GS
= 4.5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12664
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
3 of 12
Philips Semiconductors
PMR370XN
N-channel
µTrenchMOS™
extremely low level FET
5. Thermal characteristics
Table 4:
R
th(j-sp)
Thermal characteristics
Conditions
Min
-
Typ
-
Max
235
Unit
K/W
thermal resistance from junction to solder point
Figure 4
Symbol Parameter
5.1 Transient thermal impedance
103
03an29
Zth(j-sp)
(K/W)
δ
= 0.5
102
0.2
0.1
0.05
0.02
single pulse
10
10-4
10-3
10-2
10-1
1
tp
T
10
t
P
δ
=
tp
T
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 12664
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
4 of 12
Philips Semiconductors
PMR370XN
N-channel
µTrenchMOS™
extremely low level FET
6. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 1
µA;
V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage
I
D
= 0.25 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 150
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 30 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 150
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
V
GS
=
±12
V; V
DS
= 0 V
V
GS
= 4.5 V; I
D
= 0.2 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 150
°C
V
GS
= 2.5 V; I
D
= 0.1 A;
Figure 7
and
8
Dynamic characteristics
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
S
= 0.3 A; V
GS
= 0 V;
Figure 12
V
DD
= 15 V; R
L
= 15
Ω;
V
GS
= 4.5 V; R
G
= 6
Ω
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 11
I
D
= 1 A; V
DD
= 15 V; V
GS
= 4.5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
-
0.65
0.14
0.18
37
8.6
5.4
6.5
9.5
14
5.5
0.78
-
-
-
-
-
-
-
-
-
-
1.2
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
-
-
-
370
629
550
440
748
650
mΩ
mΩ
mΩ
-
-
-
-
-
10
1
100
100
µA
µA
nA
0.5
0.35
-
1
-
-
1.5
-
1.8
V
V
V
30
27
-
-
-
-
V
V
Conditions
Min
Typ
Max
Unit
Source-drain diode
9397 750 12664
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 3 March 2004
5 of 12
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