PMR370XN,115 datasheet, PDF - EEWORLD Datasheet

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PMR370XN,115: DescriptionN-channel TrenchMOS extremely low level FET SC-75 3-Pin; CategoryDiscrete semiconductor The transistor; File Size204KB，13 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com

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PMR370XN,115 Overview

N-channel TrenchMOS extremely low level FET SC-75 3-Pin

PMR370XN,115 Parametric

Parameter Name	Attribute value
Brand Name	Nexperia
Maker	Nexperia
Parts packaging code	SC-75
package instruction	PLASTIC, SC-75, 3 PIN
Contacts	3
Manufacturer packaging code	SOT416
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	0.84 A
Maximum drain current (ID)	0.84 A
Maximum drain-source on-resistance	0.44 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.53 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

PMR370XN,115 Preview

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename

Nexperia.

Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use

http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com

(email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via

salesaddresses@nexperia.com).

Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

PMR370XN

N-channel

µTrenchMOS™

extremely low level FET

M3D173

Rev. 01 — 3 March 2004

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

Surface mounted package

Low on-state resistance

Footprint 63% smaller than SOT23

Low threshold voltage.

1.3 Applications

Driver circuits

Switching in portable appliances.

1.4 Quick reference data

≤

30 V

tot

≤

0.53 W

≤

0.84 A

DSon

≤

440 mΩ.

2. Pinning information

Table 1:

Pinning - SOT416 (SC-75), simpliﬁed outline and symbol

Description

gate (g)

source (s)

drain (d)

Top view

MBK090

MBB076

Simpliﬁed outline

Symbol

SOT416 (SC-75)

3. Ordering information

Table 2:

Ordering information

Package

Name

PMR370XN

SC-75

Description

Plastic surface mounted package; 3 leads

Version

SOT416

Type number

Philips Semiconductors

PMR370XN

N-channel

µTrenchMOS™

extremely low level FET

4. Limiting values

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

DGR

tot

stg

drain-source voltage (DC)

drain-gate voltage (DC)

gate-source voltage (DC)

drain current (DC)

peak drain current

total power dissipation

storage temperature

junction temperature

source (diode forward) current (DC) T

= 25

°C

peak source (diode forward) current T

= 25

°C;

pulsed; t

≤

µs

= 25

°C;

= 4.5 V;

Figure 2

and

= 100

°C;

= 4.5 V;

Figure 2

= 25

°C;

pulsed; t

≤

µs;

Figure 3

= 25

°C;

Figure 1

Conditions

°C ≤

≤

150

°C

°C ≤

≤

150

°C;

= 20 kΩ

Min

−55

Max

±12

0.84

0.53

1.68

0.53

+150

0.44

0.88

Unit

°C

Source-drain diode

9397 750 12664

Product data

Rev. 01 — 3 March 2004

2 of 12

Philips Semiconductors

PMR370XN

N-channel

µTrenchMOS™

extremely low level FET

120

Pder

(%)

03aa17

120

Ider

(%)

03aa25

100

150

Tsp (°C)

200

100

150

200

Tsp (

tot

der

----------------------

100%

tot

(

25 C

)

der

-------------------

100%

(

25 C

)

Fig 1. Normalized total power dissipation as a

function of solder point temperature.

Fig 2. Normalized continuous drain current as a

function of solder point temperature.

03an17

(A)

Limit RDSon = VDS / ID

tp = 10

100

10-1

1 ms

10 ms

100 ms

10-2

10-1

VDS (V)

102

= 25

°C;

is single pulse; V

= 4.5 V

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 12664

Product data

Rev. 01 — 3 March 2004

3 of 12

Philips Semiconductors

PMR370XN

N-channel

µTrenchMOS™

extremely low level FET

5. Thermal characteristics

Table 4:

th(j-sp)

Thermal characteristics

Conditions

Min

Typ

Max

235

Unit

K/W

thermal resistance from junction to solder point

Figure 4

Symbol Parameter

5.1 Transient thermal impedance

103

03an29

Zth(j-sp)

(K/W)

= 0.5

102

0.2

0.1

0.05

0.02

single pulse

10-4

10-3

10-2

10-1

tp (s)

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

9397 750 12664

Product data

Rev. 01 — 3 March 2004

4 of 12

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