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2SJ168(TE85L)

Description
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,200MA I(D),SC-59
CategoryDiscrete semiconductor    The transistor   
File Size317KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SJ168(TE85L) Overview

TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,200MA I(D),SC-59

2SJ168(TE85L) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)0.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
2SJ168
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ168
High Speed Switching Applications
Analog Switch Applications
Interface Applications
Excellent switching time: t
on
= 14 ns (typ.)
High forward transfer admittance: |Y
fs
| = 100 mS (min)
@I
D
=
−50
mA
Low on resistance: R
DS (ON)
= 1.3
(typ.) @ I
D
=
−50
mA
Enhancement-mode
Complementary to 2SK1062
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
−60
±20
−200
−800
200
150
−55~150
Unit
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
SC-59
2-3F1F
Drain power dissipation (Ta
=
25°C)
Channel temperature
Storage temperature range
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
Marking
1
2007-11-01
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