®
VN05NSP
HIGH SIDE SMART POWER SOLID STATE RELAY
T YPE
VN05NSP
s
V
DSS
60 V
R
DS(on)
0.18
Ω
I
OUT
13 A
V
CC
26 V
s
s
s
s
s
OUTPUT CURRENT (CONTINUOUS):
13 A @ T
c
=25
o
C
5 V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE SHUT-DOWN
OPEN DRAIN DIAGNOSTIC OUTPUT
VERY LOW STAND-BY POWER
DISSIPATION
10
1
DESCRIPTION
The VN05NSP is a monolithic devices made
using STMicroelectronics VIPower Technology,
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
BLOCK DIAGRAM
PowerSO-10
June 1998
1/9
VN05NSP
ELECTRICAL CHARACTERISTICS
(continued)
PROTECTION AND DIAGNOSTICS (continued)
Symb ol
V
SCL
(•)
t
SC
Parameter
Status Clamp Voltage
Switch-off T ime in
Short Circuit Condition
at Start-Up
Over Current
Average Current in
Short Circuit
Open Load Current
Level
Thermal Shut-down
Temperature
Reset Temperature
Test Cond ition s
I
STAT
= 10 mA
I
STAT
= -10 mA
R
LOAD
< 10 mΩ
T
c
= 25
o
C
Min.
Typ .
6
-0.7
1.5
5
Max.
Un it
V
V
ms
I
OV
I
AV
I
OL
T
TSD
T
R
R
LOAD
< 10 mΩ
R
LOAD
< 10 mΩ
-40 T
c
125 C
T
c
= 85 C
5
140
125
o
o
60
1.4
180
A
A
mA
o
C
C
o
(*) The V
IH
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
(•) Status determination > 100
µs
after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
o
C. When the
temperature returns to about 125
o
C the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
-
If the input is pulled to power GND, a negative
voltage of -V
F
is seen by the device. (V
IL
, V
IH
thresholds and V
STAT
are increased by V
F
with
respect to power GND).
The undervoltage shutdown level is increased by
V
F
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
IH
, V
IL
and V
STAT
takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
4/9
Automotive Electronics
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