VN05HSP
HIGH SIDE SMART POWER SOLID STATE RELAY
TARGET DATA
TYPE
VN05HSP
s
V
DSS
45 V
R
DS(on
)
0.18
Ω
I
OUT
12 A
V
CC
36 V
s
s
s
s
s
OUTPUT CURRENT (CONTINUOUS):
o
6A @ T
c
=25 C
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE SHUT-DOWN
OPEN DRAIN DIAGNOSTIC OUTPUT
VERY LOW STAND-BY POWER
DISSIPATION
10
1
DESCRIPTION
The VN05HSP is a monolithic devices made
using SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
BLOCK DIAGRAM
PowerSO-10™
™
May 1997
1/8
VN05HSP
ELECTRICAL CHARACTERISTICS
(Continued)
PROTECTION AND DIAGNOSTICS
Symbol
Parameter
Test Conditions
I
STAT
= 1.6 mA
Min.
Typ.
Max.
0. 4
5. 5
I
STAT
= 10 mA
I
STAT
= -10 mA
R
LOAD
< 10 mΩ
R
LOAD
< 10 mΩ
T
c
= 85
o
C
5
140
125
1.4
180
6
-0.7
20
Unit
v
V
V
V
A
A
mA
o
V
STAT
(•) Status Voltage Output
Low
V
USD
V
SCL
(•)
I
OV
I
AV
I
OL
T
TSD
T
R
Under Voltage Shut
Down
Status Clamp Voltage
Over Curren t
Average Current in
Short Circuit
Open Load Curren t
Level
Termal Shut-Down
Temperature
Reset Temperature
C
C
o
(*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
(•) Status determinaion > 100
µs
after the switching edge.
Note 1: Above V
CC
= 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature
reaches thermal shutdown temperature.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
o
C. When the
temperature returns to about 125
o
C the switch is
automatically turned on again. To ensur the
protection in all V
CC
conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstand a
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.
Above V
CC
= 36V the output voltage is clamped
to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermal shutdown temperature.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
-
If the input is pulled to power GND, a negative
voltage of -V
F
is seen by the device. (V
IL
, V
IH
thresholds and V
STAT
are increased by V
F
with
respect to power GND).
-
The undervoltage shutdown level is increased
by V
F
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
IH
, V
IL
and V
STAT
takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
4/8
ARM Technology
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