VMB10-12F datasheet, PDF - EEWORLD Datasheet

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VMB10-12F: Description4.5 A, 18 V, NPN, Si, POWER TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size12KB，1 Pages; ManufacturerASI [ASI Semiconductor, Inc]

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VMB10-12F Overview

4.5 A, 18 V, NPN, Si, POWER TRANSISTOR

VMB10-12F Parametric

Parameter Name	Attribute value
Maximum collector current	4.5 A
Maximum Collector-Emitter Voltage	18 V
Number of terminals	4
Processing package description	0.380 INCH, STUD PACKAGE-4
state	Active
Shell connection	EMITTER
structure	SINGLE
Minimum DC amplification factor	10
jesd_30_code	O-XRPM-F4
Number of components	1
Maximum operating temperature	200 Cel
Packaging Materials	UNSPECIFIED
packaging shape	ROUND
Package Size	POST/STUD MOUNT
larity_channel_type	NPN
wer_dissipation_max__abs_	80 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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VMB10-12F

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI VMB10-12F

is Designed for

PACKAGE STYLE .380 4L FLG

.112 x 45°

Ø.125 NOM.

FULL R

.125

FEATURES:

•

Omnigold™

Metalization System

MAXIMUM RATINGS

CBO

CEO

CES

EBO

DISS

STG

2.0 A

36 V

18 V

36 V

4.0 V

20 W @ T

= 25 C

-65

C to +200

-65

C to +150

5.0

C/W

DIM

.240 / 6.10

.004 / 0.10

.085 / 2.16

.160 / 4.06

MINIMUM

inches / mm

MAXIMUM

inches / mm

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.230 / 5.84

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

ORDER CODE: ASI10741

CHARACTERISTICS

SYMBOL

CES

CEO

EBO

CBO

= 50 mA

= 15 mA

= 25 C

NONETEST

CONDITIONS

MINIMUM TYPICAL MAXIMUM

4.0

1.0

UNITS

---

= 2.5 mA

= 12.5 V

= 5.0 V

= 12.5 V

OUT

= 10 W

= 250 mA

f = 1.0 MHz

f = 88 MHz

5.0

200

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

VMB10-12F Related Products

	VMB10-12F	ASI10735	ASI10741	HF20-12S	MRF1035MB
Description	4.5 A, 18 V, NPN, Si, POWER TRANSISTOR	4.5 A, 18 V, NPN, Si, POWER TRANSISTOR	4.5 A, 18 V, NPN, Si, POWER TRANSISTOR	4.5 A, 18 V, NPN, Si, POWER TRANSISTOR	4.5 A, 18 V, NPN, Si, POWER TRANSISTOR
Maximum collector current	4.5 A	4.5 A	4.5 A	4.5 A	4.5 A
Maximum Collector-Emitter Voltage	18 V	18 V	18 V	18 V	18 V
Number of terminals	4	4	4	4	4
Processing package description	0.380 INCH, STUD PACKAGE-4	0.380 INCH, STUD PACKAGE-4	0.380 INCH, STUD PACKAGE-4	0.380 INCH, STUD PACKAGE-4	0.380 INCH, STUD PACKAGE-4
state	Active	Active	Active	Active	Active
Shell connection	EMITTER	EMITTER	EMITTER	EMITTER	EMITTER
structure	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC amplification factor	10	10	10	10	10
jesd_30_code	O-XRPM-F4	O-XRPM-F4	O-XRPM-F4	O-XRPM-F4	O-XRPM-F4
Number of components	1	1	1	1	1
Maximum operating temperature	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel
Packaging Materials	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
packaging shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package Size	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
larity_channel_type	NPN	NPN	NPN	NPN	NPN
wer_dissipation_max__abs_	80 W	80 W	80 W	80 W	80 W
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors
surface mount	NO	NO	NO	NO	NO
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON

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