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M29F400BB45MT3E

Description
256KX16 FLASH 5V PROM, 45ns, PDSO44, 0.500 INCH, LEAD FREE, PLASTIC, SOP-44
Categorystorage    storage   
File Size317KB,40 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

M29F400BB45MT3E Overview

256KX16 FLASH 5V PROM, 45ns, PDSO44, 0.500 INCH, LEAD FREE, PLASTIC, SOP-44

M29F400BB45MT3E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeSOIC
package instruction0.500 INCH, LEAD FREE, PLASTIC, SOP-44
Contacts44
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time45 ns
Other featuresBOTTOM BOOT BLOCK
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G44
JESD-609 codee3/e4
length28.5 mm
memory density4194304 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,7
Number of terminals44
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP44,.63
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)245
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height3 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceMATTE TIN/NICKEL PALLADIUM GOLD
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width12.6 mm
M29F400BT
M29F400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
single supply Flash memory
Feature summary
Single 5V±10% supply voltage for program,
erase and read operations
Access time: 45ns
Programming time
– 8µs per Byte/Word typical
11 memory blocks
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
Program/erase controller
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase
algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
Erase Suspend and Resume modes
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 program/erase cycles per block
20-year data retention
– Defectivity below 1 ppm/year
TSOP48 (N)
12 x 20mm
44
1
SO44 (MT)
Electronic signature
– Manufacturer Code: 0020h
– Top Device Code M29F400BT: 00D5h
– Bottom Device Code M29F400BB: 00D6h
ECOPACK
®
packages available
July 2006
Rev 3
1/40
www.st.com
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