SST29VF020-70-4C-NHE datasheet, PDF

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SST29VF020-70-4C-NHE: DescriptionFlash, 256KX8, 70ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32; Categorystorage storage; File Size307KB，25 Pages; ManufacturerSilicon Laboratories Inc; Environmental Compliance

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SST29VF020-70-4C-NHE Overview

Flash, 256KX8, 70ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32

SST29VF020-70-4C-NHE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Silicon Laboratories Inc
Parts packaging code	QFJ
package instruction	ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	70 ns
command user interface	NO
Data polling	YES
JESD-30 code	R-PQCC-J32
JESD-609 code	e3
length	13.97 mm
memory density	2097152 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	2K
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	3.556 mm
Department size	128
Maximum standby current	0.000015 A
Maximum slew rate	0.02 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	40
switch bit	YES
type	NOR TYPE
width	11.43 mm

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2 Mbit / 4 Mbit (x8) Small-Sector Flash

SST29SF020 / SST29SF040

SST29VF020 / SST29VF040

SST29SF/VF020 / 0402Mb / 4Mb (x8)

Byte-Program, Small-Sector flash memories

Data Sheet

FEATURES:

• Organized as 256K x8 / 512K x8

• Single Voltage Read and Write Operations

– 4.5-5.5V for SST29SF020/040

– 2.7-3.6V for SST29VF020/040

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 10 mA (typical)

– Standby Current:

30 µA (typical) for SST29SF020/040

1 µA (typical) for SST29VF020/040

• Sector-Erase Capability

– Uniform 128 Byte sectors

• Fast Read Access Time:

– 55 ns for SST29SF020/040

– 70 ns for SST29VF020/040

• Latched Address and Data

• Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

4 seconds (typical) for SST29SF/VF020

8 seconds (typical) for SST29SF/VF040

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• TTL I/O Compatibility for SST29SF020/040

• CMOS I/O Compatibility for SST29VF020/040

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

• All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST29SF020/040 and SST29VF020/040 are 256K

x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufac-

tured with SST’s proprietary, high-performance CMOS

SuperFlash technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST29SF020/040 devices write (Program or Erase)

with a 4.5-5.5V power supply. The SST29VF020/040

devices write (Program or Erase) with a 2.7-3.6V power

supply. These devices conform to JEDEC standard pin

assignments for x8 memories.

Featuring high performance Byte-Program, the

SST29SF020/040 and SST29VF020/040 devices pro-

vide a maximum Byte-Program time of 20 µsec. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, these

devices are offered with a guaranteed endurance of at least

10,000 cycles. Data retention is rated at greater than 100

years.

The SST29SF020/040 and SST29VF020/040 devices

are suited for applications that require convenient and eco-

nomical updating of program, configuration, or data mem-

S71160-12-000

11/05

ory. For all system applications, they significantly improve

performance and reliability, while lowering power consump-

tion. They inherently use less energy during Erase and

Program than alternative flash technologies. The total

energy consumed is a function of the applied voltage, cur-

rent, and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to pro-

gram and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less than

alternative flash technologies. They also improve flexibility

while lowering the cost for program, data, and configuration

storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times independent of the number of Erase/Program

cycles that have occurred. Therefore, the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST29SF020/040 and SST29VF020/040 devices are

offered in 32-lead PLCC and 32-lead TSOP packages. The

pin assignments are shown in Figures 1 and 2.

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

SSF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

SST29VF020-70-4C-NHE Related Products

	SST29VF020-70-4C-NHE	SST29SF020-55-4C-WHE	SST29SF020-55-4C-NHE	SST29SF020-55-4I-WHE	SST29VF020-70-4C-WHE	SST29VF020-70-4I-NHE	SST29VF020-70-4I-WHE	SST29SF020-55-4I-NHE
Description	Flash, 256KX8, 70ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32	Flash, 256KX8, 55ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32	Flash, 256KX8, 55ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32	Flash, 256KX8, 55ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32	Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32	Flash, 256KX8, 70ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32	Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32	Flash, 256KX8, 55ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	QFJ	TSOP1	QFJ	TSOP1	TSOP1	QFJ	TSOP1	QFJ
package instruction	ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32	TSOP1, TSSOP32,.56,20	ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32	TSOP1, TSSOP32,.56,20	8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32	ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32	8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32	ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32
Contacts	32	32	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	70 ns	55 ns	55 ns	55 ns	70 ns	70 ns	70 ns	55 ns
command user interface	NO	NO	NO	NO	NO	NO	NO	NO
Data polling	YES	YES	YES	YES	YES	YES	YES	YES
JESD-30 code	R-PQCC-J32	R-PDSO-G32	R-PQCC-J32	R-PDSO-G32	R-PDSO-G32	R-PQCC-J32	R-PDSO-G32	R-PQCC-J32
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3
length	13.97 mm	12.4 mm	13.97 mm	12.4 mm	12.4 mm	13.97 mm	12.4 mm	13.97 mm
memory density	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bit	2097152 bi
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of departments/size	2K	2K	2K	2K	2K	2K	2K	2K
Number of terminals	32	32	32	32	32	32	32	32
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	85 °C	70 °C	85 °C	85 °C	85 °C
organize	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8	256KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QCCJ	TSOP1	QCCJ	TSOP1	TSOP1	QCCJ	TSOP1	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6	TSSOP32,.56,20	LDCC32,.5X.6	TSSOP32,.56,20	TSSOP32,.56,20	LDCC32,.5X.6	TSSOP32,.56,20	LDCC32,.5X.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260
power supply	3/3.3 V	5 V	5 V	5 V	3/3.3 V	3/3.3 V	3/3.3 V	5 V
Programming voltage	2.7 V	5 V	5 V	5 V	2.7 V	2.7 V	2.7 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	3.556 mm	1.2 mm	3.556 mm	1.2 mm	1.2 mm	3.556 mm	1.2 mm	3.556 mm
Department size	128	128	128	128	128	128	128	128
Maximum standby current	0.000015 A	0.0001 A	0.0001 A	0.0001 A	0.000015 A	0.000015 A	0.000015 A	0.0001 A
Maximum slew rate	0.02 mA	0.02 mA	0.02 mA	0.02 mA	0.02 mA	0.02 mA	0.02 mA	0.02 mA
Maximum supply voltage (Vsup)	3.6 V	5.5 V	5.5 V	5.5 V	3.6 V	3.6 V	3.6 V	5.5 V
Minimum supply voltage (Vsup)	2.7 V	4.5 V	4.5 V	4.5 V	2.7 V	2.7 V	2.7 V	4.5 V
Nominal supply voltage (Vsup)	3 V	5 V	5 V	5 V	3 V	3 V	3 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	J BEND	GULL WING	J BEND	GULL WING	GULL WING	J BEND	GULL WING	J BEND
Terminal pitch	1.27 mm	0.5 mm	1.27 mm	0.5 mm	0.5 mm	1.27 mm	0.5 mm	1.27 mm
Terminal location	QUAD	DUAL	QUAD	DUAL	DUAL	QUAD	DUAL	QUAD
Maximum time at peak reflow temperature	40	40	40	40	40	40	40	40
switch bit	YES	YES	YES	YES	YES	YES	YES	YES
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	11.43 mm	8 mm	11.43 mm	8 mm	8 mm	11.43 mm	8 mm	11.43 mm
Maker	Silicon Laboratories Inc	-	-	Silicon Laboratories Inc	Silicon Laboratories Inc	Silicon Laboratories Inc	Silicon Laboratories Inc	Silicon Laboratories Inc

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