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SST29VF020-70-4C-WHE

Description
Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32
Categorystorage    storage   
File Size307KB,25 Pages
ManufacturerSilicon Laboratories Inc
Environmental Compliance
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SST29VF020-70-4C-WHE Overview

Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32

SST29VF020-70-4C-WHE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSilicon Laboratories Inc
Parts packaging codeTSOP1
package instruction8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32
Contacts32
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time70 ns
command user interfaceNO
Data pollingYES
JESD-30 codeR-PDSO-G32
JESD-609 codee3
length12.4 mm
memory density2097152 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size2K
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.56,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size128
Maximum standby current0.000015 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width8 mm
2 Mbit / 4 Mbit (x8) Small-Sector Flash
SST29SF020 / SST29SF040
SST29VF020 / SST29VF040
SST29SF/VF020 / 0402Mb / 4Mb (x8)
Byte-Program, Small-Sector flash memories
Data Sheet
FEATURES:
• Organized as 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 4.5-5.5V for SST29SF020/040
– 2.7-3.6V for SST29VF020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 10 mA (typical)
– Standby Current:
30 µA (typical) for SST29SF020/040
1 µA (typical) for SST29VF020/040
• Sector-Erase Capability
– Uniform 128 Byte sectors
• Fast Read Access Time:
– 55 ns for SST29SF020/040
– 70 ns for SST29VF020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
4 seconds (typical) for SST29SF/VF020
8 seconds (typical) for SST29SF/VF040
• Automatic Write Timing
– Internal V
PP
Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• TTL I/O Compatibility for SST29SF020/040
• CMOS I/O Compatibility for SST29VF020/040
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST29SF020/040 and SST29VF020/040 are 256K
x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufac-
tured with SST’s proprietary, high-performance CMOS
SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and
manufacturability compared with alternate approaches.
The SST29SF020/040 devices write (Program or Erase)
with a 4.5-5.5V power supply. The SST29VF020/040
devices write (Program or Erase) with a 2.7-3.6V power
supply. These devices conform to JEDEC standard pin
assignments for x8 memories.
Featuring high performance Byte-Program, the
SST29SF020/040 and SST29VF020/040 devices pro-
vide a maximum Byte-Program time of 20 µsec. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of at least
10,000 cycles. Data retention is rated at greater than 100
years.
The SST29SF020/040 and SST29VF020/040 devices
are suited for applications that require convenient and eco-
nomical updating of program, configuration, or data mem-
©2005 Silicon Storage Technology, Inc.
S71160-12-000
11/05
1
ory. For all system applications, they significantly improve
performance and reliability, while lowering power consump-
tion. They inherently use less energy during Erase and
Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash technologies. They also improve flexibility
while lowering the cost for program, data, and configuration
storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times independent of the number of Erase/Program
cycles that have occurred. Therefore, the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST29SF020/040 and SST29VF020/040 devices are
offered in 32-lead PLCC and 32-lead TSOP packages. The
pin assignments are shown in Figures 1 and 2.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

SST29VF020-70-4C-WHE Related Products

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Description Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 Flash, 256KX8, 55ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 Flash, 256KX8, 55ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 Flash, 256KX8, 70ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 Flash, 256KX8, 55ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 Flash, 256KX8, 70ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 Flash, 256KX8, 55ns, PQCC32, ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Parts packaging code TSOP1 TSOP1 QFJ QFJ TSOP1 QFJ TSOP1 QFJ
package instruction 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 TSOP1, TSSOP32,.56,20 ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 TSOP1, TSSOP32,.56,20 ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32
Contacts 32 32 32 32 32 32 32 32
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 70 ns 55 ns 55 ns 70 ns 55 ns 70 ns 70 ns 55 ns
command user interface NO NO NO NO NO NO NO NO
Data polling YES YES YES YES YES YES YES YES
JESD-30 code R-PDSO-G32 R-PDSO-G32 R-PQCC-J32 R-PQCC-J32 R-PDSO-G32 R-PQCC-J32 R-PDSO-G32 R-PQCC-J32
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3
length 12.4 mm 12.4 mm 13.97 mm 13.97 mm 12.4 mm 13.97 mm 12.4 mm 13.97 mm
memory density 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bi
Memory IC Type FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH
memory width 8 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1 1
Number of departments/size 2K 2K 2K 2K 2K 2K 2K 2K
Number of terminals 32 32 32 32 32 32 32 32
word count 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
character code 256000 256000 256000 256000 256000 256000 256000 256000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 85 °C 85 °C 85 °C 85 °C
organize 256KX8 256KX8 256KX8 256KX8 256KX8 256KX8 256KX8 256KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP1 TSOP1 QCCJ QCCJ TSOP1 QCCJ TSOP1 QCCJ
Encapsulate equivalent code TSSOP32,.56,20 TSSOP32,.56,20 LDCC32,.5X.6 LDCC32,.5X.6 TSSOP32,.56,20 LDCC32,.5X.6 TSSOP32,.56,20 LDCC32,.5X.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE CHIP CARRIER CHIP CARRIER SMALL OUTLINE, THIN PROFILE CHIP CARRIER SMALL OUTLINE, THIN PROFILE CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260 260
power supply 3/3.3 V 5 V 5 V 3/3.3 V 5 V 3/3.3 V 3/3.3 V 5 V
Programming voltage 2.7 V 5 V 5 V 2.7 V 5 V 2.7 V 2.7 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 3.556 mm 3.556 mm 1.2 mm 3.556 mm 1.2 mm 3.556 mm
Department size 128 128 128 128 128 128 128 128
Maximum standby current 0.000015 A 0.0001 A 0.0001 A 0.000015 A 0.0001 A 0.000015 A 0.000015 A 0.0001 A
Maximum slew rate 0.02 mA 0.02 mA 0.02 mA 0.02 mA 0.02 mA 0.02 mA 0.02 mA 0.02 mA
Maximum supply voltage (Vsup) 3.6 V 5.5 V 5.5 V 3.6 V 5.5 V 3.6 V 3.6 V 5.5 V
Minimum supply voltage (Vsup) 2.7 V 4.5 V 4.5 V 2.7 V 4.5 V 2.7 V 2.7 V 4.5 V
Nominal supply voltage (Vsup) 3 V 5 V 5 V 3 V 5 V 3 V 3 V 5 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING J BEND J BEND GULL WING J BEND GULL WING J BEND
Terminal pitch 0.5 mm 0.5 mm 1.27 mm 1.27 mm 0.5 mm 1.27 mm 0.5 mm 1.27 mm
Terminal location DUAL DUAL QUAD QUAD DUAL QUAD DUAL QUAD
Maximum time at peak reflow temperature 40 40 40 40 40 40 40 40
switch bit YES YES YES YES YES YES YES YES
type NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
width 8 mm 8 mm 11.43 mm 11.43 mm 8 mm 11.43 mm 8 mm 11.43 mm
Maker Silicon Laboratories Inc - - Silicon Laboratories Inc Silicon Laboratories Inc Silicon Laboratories Inc Silicon Laboratories Inc Silicon Laboratories Inc
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