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RA353GP

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, RA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size108KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

RA353GP Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, RA, 2 PIN

RA353GP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
package instructionO-XEDB-N2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XEDB-N2
JESD-609 codee0
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum reverse recovery time0.4 µs
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED

RA353GP Preview

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
RA351GP
THRU
RA357GP
35Amp Glass
Passivated Rectifier
50 to 1000 Volts
RA
A
Features
Glass Passivated Chip
Low Leakage, Low cost
Low Forward Voltage Drop
High Current Capability
For Automotive Applications
Maximum Ratings
Operating Temperature: -55°C to +175°C
Storage Temperature: -55°C to +175°C
MCC
Catalog
Number
Device
Marking
RA351GP
RA352GP
RA353GP
RA354GP
RA355GP
RA356GP
RA357GP
---
---
---
---
---
---
---
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
35V
70V
140V
280V
420V
560V
700V
E
C
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
35A
T
A
= 150°C
Current
Peak Forward Surge
I
FSM
500A 8.3ms, half sine
Current
Maximum
1.0V
I
FM
= 35A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C*
Maximum DC
Reverse Current At
I
R
5.0
µA
T
J
= 25°C
Rated DC Blocking
150µA
T
J
=
1 00 °C
Voltage
Typical Junction
C
J
100pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
DIMENSIONS
INCHES
MIN
.380
.165
.215
.234
----
MM
MIN
9.70
4.20
5.50
6.00
---
DIM
A
B
C
D
E
MAX
.410
.185
.220
.250
5'
MAX
10.40
4.70
5.70
6.40
5'
NOTE
Revision: 4
www.mccsemi.com
2004/04/02
RA351GP thru RA357GP
Figure 1
Typical Forward Characteristics
20
35
100
60
40
25
20
25°C
Amps
10
Amps
.6
.4
.2
.1
.06
.04
.02
.01
.4
.6
.8
Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
400
300
200
Amps
100
50
0
1.0
1.2
1.4
15
20
30
Figure 2
Forward Derating Curve
MCC
Micro Commercial Components
TM
10
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
0
50
75
100
125
150
175
°C
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
°C
Figure 4
Peak Forward Surge Current
500
1
2
4
6
8 10
Cycles
20
40
00
60 80 100
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
Figure 3
Junction Capacitance
100
60
40
20
pF
10
6
4
2
1
.1
.2
.4
1
Volts
2
4
10
20
40
100
200
400
1000
T
J
=25°C
Junction Capacitance - pF
versus
Reverse Voltage - Volts
Revision: 4
www.mccsemi.com
2004/04/02
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