Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1986
DESCRIPTION
·With
TO-3P(I) package
·Complement
to type 2SC5358
APPLICATIONS
·Power
amplifier applications
·Recommend
for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
DESCRIPTION
·
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
CONDITIONS
VALUE
-230
-230
-5
-15
-1.5
150
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Open collector
P
C
T
j
T
stg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1986
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA; I
B
=0
-230
V
V
CEsat
V
BE
Collector-emitter saturation voltage
I
C
=-8 A;I
B
=-0.8A
B
-3.0
V
Base-emitter voltage
I
C
=-7A ; V
CE
=-5V
-1.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-230V; I
E
=0
-5
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-5
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-5V
55
160
h
FE-2
DC current gain
I
C
=-7A ; V
CE
=-5V
35
f
T
C
OB
Transition frequency
I
C
=-1A ; V
CE
=-5V
I
E
=0; V
CB
=-10V;f=1MHz
30
MHz
Output capacitance
360
pF
h
FE-1
classifications
R
55-110
O
80-160
2
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