FEATURES
n
n
n
n
n
n
n
n
n
n
n
n
n
n
LTC4413-1/LTC4413-2
Dual 2.6A, 2.5V to 5.5V
Fast Ideal Diodes
in 3mm
×
3mm DFN
DESCRIPTION
The LTC
®
4413-1 and LTC4413-2 each contain two mono-
lithic ideal diodes, each capable of supplying up to 2.6A
from input voltages between 2.5V and 5.5V. The ideal
diodes use a 100mΩ P-channel MOSFET to independently
connect INA to OUTA and INB to OUTB. During normal
forward operation, the voltage drops across each of
these diodes are regulated to as low as 18mV. Quiescent
current is less than 80μA for diode currents up to 1A. If
either of the output voltages exceeds its respective input
voltage, that MOSFET is turned off and less than 1μA of
reverse current flows from OUT to IN. Maximum forward
current in each MOSFET is limited to a constant 2.6A and
internal thermal limiting circuits protect the part during
fault conditions. An internal overvoltage protection sensor
detects when a voltage exceeds the LTC4413-2 absolute
maximum voltage tolerance.
Two active-high control pins independently turn off the two
ideal diodes contained within the LTC4413-1/LTC4413-2.
When the selected channel is reverse biased, or the
LTC4413-1/LTC4413-2 is put into low power standby, the
status signal is pulled low by an 11μA open drain.
The LTC4413-1/LTC4413-2 are housed in a 10-lead 3mm
×
3mm DFN package.
L,
LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. PowerPath is a trademark of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
2-Channel Ideal Diode OR’ing or Load Sharing
Low Loss Replacement for PowerPath™ OR’ing
Diodes
Fast Response Replacement for LTC4413
Low Forward On-Resistance (140mΩ Max at 3.6V)
Low Reverse Leakage Current
Low Regulated Forward Voltage (18mV Typ)
Overvoltage Protection Sensor with Drive Output for
an External P-Channel MOSFET (LTC4413-2 Only)
2.5V to 5.5V Operating Range
2.6A Maximum Forward Current
Internal Current Limit Protection
Internal Thermal Protection
Status Output to Indicate if Selected Channel is
Conducting
Programmable Channel On/Off
Low Profile (0.75mm) 10-Lead 3mm
×
3mm DFN
Package
APPLICATIONS
n
n
n
n
n
Battery and Wall Adapter Diode OR’ing in Handheld
Products
Backup Battery Diode OR’ing
Power Switching
USB Peripherals
Uninterruptable Supplies
TYPICAL APPLICATION
Automatic Switchover from a Battery to a Wall Adapter
FDR8508
WALL
ADAPTER
INPUT
INA
0.1μF
1Ω
10μF
IDEAL
ENBA
STAT
LTC4413-2
GND
OVI
BAT
ENBB
INB
IDEAL
OVP
OUTB
OUTA
POWER LOSS (mW)
470k
STAT
500
V
CC
700
600
Power Loss vs Load
LTC4413-1
400
300
1N5817
200
100
0
0
500
OVP
TO LOAD
4.7μF
441312 TA01a
+
STAT IS HIGH WHEN WALL ADAPTER IS
SUPPLYING LOAD CURRENT
OVP IS HIGH WHEN WALL ADAPTER VOLTAGE > 6V
1000 1500 2000
LOAD (mA)
2500
3000
441312 TA01b
441312fd
1
LTC4413-1/LTC4413-2
ABSOLUTE MAXIMUM RATINGS
(Note 1)
INA, INB, OUTA, OUTB, STAT,
ENBA, ENBB Voltage .................................... –0.3V to 6V
OVI, OVP Voltage ....................................... –0.3V to 13V
Operating Temperature Range .................–40°C to 85°C
Storage Temperature Range .................. –65°C to 125°C
Continuous Power Dissipation ..........................1500mW
(Derate 25mW/°C Above 70°C)
PIN CONFIGURATION
LTC4413-1
TOP VIEW
INA
ENBA
GND
ENBB
INB
1
2
3
4
5
11
10 OUTA
9 STAT
8 NC
7 NC
6 OUTB
INA
ENBA
GND
ENBB
INB
1
2
3
4
5
11
LTC4413-2
TOP VIEW
10 OUTA
9 STAT
8 OVI
7 OVP
6 OUTB
DD PACKAGE
10-LEAD (3mm × 3mm) PLASTIC DFN
T
JMAX
= 125°C,
θ
JA
= 43°C/W
EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB
DD PACKAGE
10-LEAD (3mm × 3mm) PLASTIC DFN
T
JMAX
= 125°C,
θ
JA
= 43°C/W
EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH
LTC4413EDD-1#PBF
LTC4413EDD-2#PBF
LEAD BASED FINISH
LTC4413EDD-1
LTC4413EDD-2
TAPE AND REEL
LTC4413EDD-1#TRPBF
LTC4413EDD-2#TRPBF
TAPE AND REEL
LTC4413EDD-1#TR
LTC4413EDD-2#TR
PART MARKING
LCPP
LCPQ
PART MARKING
LCPP
LCPQ
PACKAGE DESCRIPTION
10-Lead (3mm
×
3mm) Plastic DFN
10-Lead (3mm
×
3mm) Plastic DFN
PACKAGE DESCRIPTION
10-Lead (3mm
×
3mm) Plastic DFN
10-Lead (3mm
×
3mm) Plastic DFN
TEMPERATURE RANGE
–40°C to 85°C
–40°C to 85°C
TEMPERATURE RANGE
–40°C to 85°C
–40°C to 85°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
For more information on lead free part marking, go to:
http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to:
http://www.linear.com/tapeandreel/
ELECTRICAL CHARACTERISTICS
SYMBOL
V
IN
, V
OUT
UVLO
I
QF
I
QRIN
I
QRGND
PARAMETER
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. (Notes 2, 6)
CONDITIONS
l
l
l
l
l
MIN
2.5
TYP
MAX
5.5
2.45
UNITS
V
V
V
μA
μA
μA
441312fd
Operating Supply Range for Channel A or B V
IN
and/or V
OUT
Must be in This Range for
Proper Operation
UVLO Turn-On Rising Threshold
UVLO Turn-Off Falling Threshold
Quiescent Current in Forward Regulation,
Measured via GND
Current Drawn from or Sourced into IN
When V
OUT
is Greater than V
IN
Quiescent Current While in Reverse
Turn-Off, Measured via GND
Max (V
INA
, V
INB
, V
OUTA
, V
OUTB
)
Max (V
INA
, V
INB
, V
OUTA
, V
OUTB
)
V
INA
= 3.6V, I
INA
= 100mA, V
INB
= 0V,
I
INB
= 0mA (Note 3)
V
IN
= 3.6V, V
OUT
= 5.5V (Note 6)
V
INA
= V
INB
= 0V, V
OUTB
= V
OUTA
= 5.5V,
V
STAT
= 0V
1.7
40
–1
2.5
28
58
4.5
36
2
LTC4413-1/LTC4413-2
ELECTRICAL CHARACTERISTICS
SYMBOL
I
QROUTB
PARAMETER
Quiescent Current While in Reverse
Turn-Off. Current Drawn from V
OUTA
When
OUTB Supplies Chip Power
Quiescent Current with Both ENBA and
ENBB High
Reverse Turn-Off Voltage (V
OUT
– V
IN
)
Forward Voltage Drop (V
IN
– V
OUT
)
at I
OUT
= –1mA
On-Resistance, R
FWD
Regulation
(Measured as
ΔV/ΔI)
On-Resistance, R
ON
Regulation
(Measured as V/I at I
IN
= 1A)
PowerPath Turn-On Time
PowerPath Turn-Off Time
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. (Notes 2, 6)
CONDITIONS
V
INA
= V
INB
= 0V, V
OUTA
= 3.6V, V
OUTB
= 5.5V
l
MIN
TYP
3.5
MAX
6.5
UNITS
μA
I
QOFF
V
RTO
V
FWD
R
FWD
R
ON
t
ON
t
OFF
V
INA
= V
INB
= 3.6V, V
ENBA
= V
ENBB
= 1V
V
IN
= 3.6V
V
IN
= 3.6V
V
IN
= 3.6V, I
OUT
= –100mA to –500mA (Note 5)
V
IN
= 3.6V, I
IN
= 1A (Note 5)
V
IN
= 3.6V, from ENB Falling to I
OUT
Ramp
Starting
V
IN
= 3.6V, from ENB Rising with I
IN
= 100mA
Falling to 0mA
V
INA OR B
= 3.6V (Note 5)
V
INA OR B
= 3.6V, I
OUT
= 1.8A (Note 5)
l
l
l
28
–5
18
100
140
11
2
38
10
24
140
200
μA
mV
mV
mΩ
mΩ
μs
μs
Short-Circuit Response
I
OC
I
QOC
STAT Output
I
SOFF
I
SON
t
S(ON)
t
S(OFF)
ENB Inputs
V
ENBIH
V
ENBIL
V
ENBHYST
I
ENB
V
OVIH
V
OVIL
V
OVID
I
OVI
ENB Inputs Rising Threshold Voltage
ENB Inputs Falling Threshold Voltage
ENB Input Hysteresis
ENB Inputs Pull-Down Current
OVI Input Rising Threshold Voltage
OVI Input Falling Threshold Voltage
OVI-OVP Voltage Drop
OVI Bias Current
V
ENB
Rising
V
ENB
Falling
V
ENBHYST
= (V
ENBIH
– V
ENBIL
)
V
OUT
< V
IN
= 3.6V, V
ENB
< V
IL
V
OVI
Rising
V
OVI
Falling
V
OVI
= 8V, No Load at OVP
V
OVI
= 8V
5.4
l
l
l
Current Limit
Quiescent Current While in Overcurrent
Operation
STAT Off Current
STAT Sink Current
STAT Pin Current Turn-On Time
STAT Pin Current Turn-Off Time
1.8
100
130
A
μA
Shut Down
V
IN
> V
OUT
, V
CTL
< V
IL
, T
J
< 135°C, I
OUT
< I
MAX
V
IN
= 3.6V, from ENB Falling
V
IN
= 3.6V, from ENB Rising
l
l
–1
7
0
11
1.8
0.8
540
1
15
μA
μA
μs
μs
600
mV
mV
mV
400
2
460
90
3
5.9
5.6
100
80
4
6.2
μA
V
V
mV
μA
OVI Input (LTC4413-2 Only)
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2:
The LTC4413-1/LTC4413-2 are guaranteed to meet performance
specifications from 0°C to 85°C. Specifications over the –40°C to 85°C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 3:
Quiescent current increases with diode current: refer to plot of
I
QF
vs I
OUT
.
Note 4:
This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions.
Overtemperature protection will become active at a junction temperature
greater than the maximum operating temperature. Continuous operation
above the specified maximum operating junction temperature may impair
device reliability.
Note 5:
Specification is guaranteed by correlation to wafer-level
measurements.
Note 6:
Unless otherwise specified, current into a pin is positive and
current out of a pin is negative. All voltages referenced to GND.
441312fd
3
LTC4413-1/LTC4413-2
TYPICAL PERFORMANCE CHARACTERISTICS
I
QF
vs I
LOAD
(Log)
120
120°C
100
80
I
QF
(μA)
60
40
20
0
1
10
100
LOAD (mA)
1000
10000
441312 G01
I
QF
vs I
LOAD
(Linear)
120
120°C
100
80
I
QF
(μA)
60
40
20
0
80°C
40°C
0°C
I
QF
(μA)
–40°C
100
80°C
40°C
0°C
–40°C
120
I
QF
vs Temperature
1A
80
500mA
60
40
20
0
–40
100mA
1mA
0
500
1000 1500 2000
LOAD (mA)
2500
3000
0
40
80
TEMPERATURE (°C)
120
441312 G03
441312 G02
I
QF
vs V
IN
90
80
70
60
I
OC
(mA)
I
QF
(μA)
50
40
30
20
10
0
2
2.5
3
3.5
4
V
IN
(V)
441312 G04
I
OC
vs Temperature
3500
I
QF
= 1A
3000
2500
I
QF
= 100mA
2000
1500
UVLO THRESHOLDS (V)
2.20
2.15
2.10
2.05
2.00
UVLO Thresholds vs Temperature
RISING
FALLING
1.95
1.90
1.85
–40
1000
500
0
–40
4.5
5
5.5
6
0
40
TEMPERATURE (°C)
80
120
441312 G05
0
40
TEMPERATURE (°C)
80
120
441312 G06
UVLO Hysteresis vs Temperature
250
600
500
ENB Thresholds vs Temperature
120
100
ENB HYSETERSIS (mV)
120
441312 G08
ENB Hysteresis vs Temperature
UVLO HYSTERESIS (mV)
200
ENBIH/ENBIL (mV)
150
400
300
200
100
0
–40
ENBIH
ENBIL
80
60
40
20
0
–40 –20
100
50
0
–40 –20
0
20 40
60 80
TEMPERATURE (°C)
100 120
441312 G07
0
40
80
TEMPERATURE (°C)
0
20 40 60 80
TEMPERATURE (°C)
100 120
441312 G09
441312fd
4
LTC4413-1/LTC4413-2
TYPICAL PERFORMANCE CHARACTERISTICS
R
FWD
vs V
IN
and I
LOAD
= 500mA
80
78
76
R
FWD
500mA (mΩ)
74
R
FWD
(mΩ)
72
70
68
66
64
62
60
2
2.5
3
3.5
4
4.5
V
IN
(V)
5
0
5.5
6
0
500
1000 1500 2000
LOAD (mA)
2500
0
3000
0
1
10
100
LOAD (mA)
1000
0
10000
441312 G12
V
FWD
and R
FWD
vs I
LOAD
(Linear)
500
120°C
80°C
40°C
0°C
–40°C
250
600
500
400
R
FWD
(mΩ)
V
FWD
(mV)
150
R
FWD
and V
FWD
vs I
LOAD
(Log)
120°C
80°C
40°C
0°C
–40°C
R
FWD
300
200
50
100
V
FWD
150
100
50
300
250
200
V
FWD
(mV)
400
200
V
FWD
300
200
R
FWD
100
100
441312 G10
441312 G11
V
FWD
vs I
LOAD
(Log)
250
120°C
80°C
40°C
0°C
–40°C
R
FWD
(mΩ)
120
100
R
FWD
vs Temperature
1
I
LEAK
vs Temperature at
V
REVERSE
= 5.5V
200
100mA
80
60
40
1A
I
LEAK
(μA)
500mA
0.1
V
FWD
(mV)
150
0.01
5.5V
3.6V
100
0.001
50
20
0
–40
0.0001
0
1
10
100
LOAD (mA)
1000
10000
441312 G13
0
40
80
TEMPERATURE (°C)
120
441312 G14
0.00001
–40 –20
0
20 40 60 80
TEMPERATURE (°C)
100 120
441312 G15
I
LEAK
vs V
REVERSE
100
10
1
I
LEAK
(μA)
0.1
0.01
120°C
80°C
40°C
0°C
–40°C
Response to 800mA Load Step
in <16μs
CH1 = IN 100mV/DIV
CH2 OUT
100mV/DIV
ENB Turn-On, 30μs to Turn On
with 180mA Load
CH1 IN 1V/DIV
CH3 ENB
1V/DIV
CH2 OUT
1V/DIV
CH4 I
OUT
200mV/DIV
0.001
0.0001
0.00001
0
1
2
3
4
V
REVERSE
(V)
5
6
441312 G16
CH4 I
OUT
200mV/DIV
4μs/DIV
441312 G17
10μs/DIV
441312 G18
441312fd
5
京公网安备 11010802033920号
EEWORLD
