K9F2G16Q0M-PCB00 datasheet, PDF

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K9F2G16Q0M-PCB00: DescriptionFlash, 128MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48; Categorystorage storage; File Size602KB，38 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K9F2G16Q0M-PCB00 Overview

Flash, 128MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48

K9F2G16Q0M-PCB00 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	TSOP1
package instruction	TSOP1,
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	30 ns
Other features	CONTAINS ADDITIONAL 64M BIT NAND FLASH
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	2147483648 bit
Memory IC Type	FLASH
memory width	16
Humidity sensitivity level	2
Number of functions	1
Number of terminals	48
word count	134217728 words
character code	128000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
type	SLC NAND TYPE
width	12 mm

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K9F2G08Q0M K9F2G16Q0M

K9F2G08U0M K9F2G16U0M

Preliminary

FLASH MEMORY

Document Title

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Revision History

Revision No

0.0

0.1

History

1. Initial issue

1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)

2. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 35)

Draft Date

Sep. 19.2001

Nov. 22. 2002

Remark

Advance

Preliminary

0.2

The min. Vcc value 1.8V devices is changed.

K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V

Mar. 6.2003

Preliminary

0.3

Few current value is changed.

Before

K9F2GXXQ0M

Typ.

After

K9F2GXXQ0M

Typ.

Max.

±10

Max.

100

±20

Apr. 2. 2003

Unit : us

K9F2GXXU0M

Typ.

Max.

100

±20

Preliminary

K9F2GXXU0M

Typ.

Max.

±10

Apr. 9. 2003

Preliminary

0.4

1. The 3rd Byte ID after 90h ID read command is don’ cared.

The 5th Byte ID after 90h ID read command is deleted.

2. Note is added.

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

3. Pb-free Package is added.

K9F2G08Q0M-PCB0,PIB0

K9F2G08U0M-PCB0,PIB0

K9F2G16U0M-PCB0,PIB0

K9F2G16Q0M-PCB0,PIB0

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

K9F2G08Q0M K9F2G16Q0M

K9F2G08U0M K9F2G16U0M

PIN DESCRIPTION

Pin Name

I/O

~ I/O

(K9F2G08X0M)

I/O

~ I/O

(K9F2G16X0M)

Pin Function

Preliminary

FLASH MEMORY

DATA INPUTS/OUTPUTS

The I/O pins are used to input command, address and data, and to output data during read operations. The I/

O pins float to high-z when the chip is deselected or when the outputs are disabled.

I/O8 ~ I/O15 are used only in X16 organization device. Since command input and address input are x8 oper-

ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and

output.

COMMAND LATCH ENABLE

The CLE input controls the activating path for commands sent to the command register. When active high,

commands are latched into the command register through the I/O ports on the rising edge of the WE signal.

ADDRESS LATCH ENABLE

The ALE input controls the activating path for address to the internal address registers. Addresses are

latched on the rising edge of WE with ALE high.

CHIP ENABLE

The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and

the device does not return to standby mode in program or erase operation. Regarding CE control during

read operation, refer to ’

Page read’section of Device operation .

READ ENABLE

The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid

tREA after the falling edge of RE which also increments the internal column address counter by one.

WRITE ENABLE

The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of

the WE pulse.

WRITE PROTECT

The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage

generator is reset when the WP pin is active low.

READY/BUSY OUTPUT

The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or

random read operation is in process and returns to high state upon completion. It is an open drain output and

does not float to high-z condition when the chip is deselected or when outputs are disabled.

POWER-ON READ ENABLE

The PRE controls auto read operation executed during power-on. The power-on auto-read is enabled when

PRE pin is tied to Vcc.

POWER

is the power supply for device.

GROUND

NO CONNECTION

Lead is not internally connected.

CLE

ALE

R/B

PRE

Vcc

Vss

N.C

NOTE

: Connect all V

and V

pins of each device to common power supply outputs.

Do not leave V

or V

disconnected.

K9F2G16Q0M-PCB00 Related Products

	K9F2G16Q0M-PCB00	K9F2G08Q0M-YCB00	K9F2G08Q0M-PIB00	K9F2G16Q0M-YCB00	K9F2G16Q0M-PIB00	K9F2G08Q0M-PCB00	K9F2G08Q0M-YIB00	K9F2G16Q0M-YIB00
Description	Flash, 128MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48	Flash, 256MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48	Flash, 256MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48	Flash, 128MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48	Flash, 128MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48	Flash, 256MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48	Flash, 256MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48	Flash, 128MX16, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
Parts packaging code	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
package instruction	TSOP1,	TSOP1,	12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48	12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48	TSOP1,	12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48	12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48	12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
Contacts	48	48	48	48	48	48	48	48
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
Maximum access time	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns	30 ns
Other features	CONTAINS ADDITIONAL 64M BIT NAND FLASH	CONTAINS ADDITIONAL 64M BIT NAND FLASH	CONTAINS ADDITIONAL 64M BIT NAND FLASH	CONTAINS ADDITIONAL 64M BIT NAND FLASH	CONTAINS ADDITIONAL 64M BIT NAND FLASH	CONTAINS ADDITIONAL 64M BIT NAND FLASH	CONTAINS ADDITIONAL 64M BIT NAND FLASH	CONTAINS ADDITIONAL 64M BIT NAND FLASH
JESD-30 code	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48
length	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm
memory density	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	16	8	8	16	16	8	8	16
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	48	48	48	48	48	48	48	48
word count	134217728 words	268435456 words	268435456 words	134217728 words	134217728 words	268435456 words	268435456 words	134217728 words
character code	128000000	256000000	256000000	128000000	128000000	256000000	256000000	128000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C	85 °C
organize	128MX16	256MX8	256MX8	128MX16	128MX16	256MX8	256MX8	128MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
type	SLC NAND TYPE	-	SLC NAND TYPE	SLC NAND TYPE	SLC NAND TYPE	SLC NAND TYPE	SLC NAND TYPE	SLC NAND TYPE

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