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BLV2048

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size157KB,15 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BLV2048 Overview

Transistor

BLV2048 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)20 A
ConfigurationSingle
Minimum DC current gain (hFE)45
JESD-609 codee0
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)500 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

BLV2048 Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D374
BLV2048
UHF push-pull power transistor
Preliminary specification
1999 Apr 23
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
FEATURES
Emitter ballasting resistors for optimum temperature
profile
Gold metallization ensures excellent reliability
Internal input and output matching for an easy design of
wideband circuits.
AlN substrate package for environmental safety
Linear amplification with low distortion
Low spectral regrowth in multichannel power amplifiers
according to IS-95.
book, halfpage
BLV2048
PINNING - SOT494A
PIN
1
2
3
4
5
SYMBOL
c
c
b
b
e
DESCRIPTION
collector 1
collector 2
base 1
base 2
emitter, connected to flange
1
2
APPLICATIONS
Common emitter class-AB operation in base stations for
PCN (Personal Communication Network): 1805 -
1880 MHz and PCS (Personal Communication
Services): 1910 - 1990 MHz.
5
3
Top view
4
MBK202
Fig.1 Simplified outline.
DESCRIPTION
NPN silicon planar push-pull power transistor in a 4-lead
AIN SOT494A flange package with two ceramic caps.
The emitters are connected to the flange.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common emitter test circuit.
MODE OF
OPERATION
CW, class-AB
2-tone, class-AB
f
(MHz)
2 000
f
1
= 2 000.0; f
2
= 2000.1
V
CE
(V)
26
26
P
L
(W)
120
120 (PEP)
G
p
(dB)
≥8
≥8.5
η
C
(%)
≥40
≥33
d
im
(dBc)
≤−28
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
Per section unless otherwise specified.
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°C
CONDITIONS
open emitter
open base
open collector
−65
MIN.
MAX.
65
27
3
20
10
415
+150
200
UNIT
V
V
V
A
A
W
°C
°C
1999 Apr 23
2
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-h
R
th mb-h
Note
1. Thermal resistance is determined under nominal 2-tone RF operating conditions.
PARAMETER
thermal resistance from junction to
heatsink
thermal resistance from mounting
base to heatsink
CONDITIONS
P
L
= 120 W(PEP); T
h
= 40°C; note 1:
total device; both sections equally loaded
BLV2048
VALUE
≤0.6
0.2
UNIT
K/W
K/W
CHARACTERISTICS
T
j
= 25
°C;
per section; unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
Note
1. Capacitance of die only.
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
open emitter; I
C
= 40 mA
open base; I
C
= 120 mA
open collector; I
E
= 40 mA
V
CE
= 26 V; V
BE
= 0
V
CE
= 10 V; I
C
= 4 A
V
CB
= 26 V; I
E
= i
e
= 0;
f = 1 MHz; note 1
MIN.
65
27
3
45
72
41
TYP.
MAX.
8
100
pF
pF
UNIT
V
V
V
mA
V
CE
= 26 V; I
C
= 0; f = 1 MHz
1999 Apr 23
3
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV2048
100
h
FE
80
handbook, halfpage
160
MBK397
Cre
(pF)
120
60
80
40
20
40
0
0
2
4
6
8
I
C
(mA)
10
0
0
10
20
VCB (V)
30
V
CE
= 10 V.
f = 1 MHz.
Fig.2
DC current gain as a function of collector
current (per section); typical values.
Fig.3
Feedback capacitance as a function of
collector-base voltage (per section);
typical values.
1999 Apr 23
4
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
APPLICATION INFORMATION
RF performance at T
h
= 25
°C
in a common emitter test circuit; bias circuit: R
i
= 0.2
Ω.
MODE OF
OPERATION
CW, class-AB
2-tone, class-AB
CDMA, class-AB
Notes
1.
f
(MHz)
2000
f
1
= 2000.0; f
2
= 2000.1
2000
V
CE
(V)
26
26
26
I
CQ
(mA)
2x300
2x300
2x500
P
L
(W)
120
120 (PEP)
25
G
p
(dB)
≥8
≥8.5
typ. 9
η
C
(%)
≥40
≥33
typ. 22
BLV2048
d
im
(dBc)
≤−28
ACP
(dBc)
≤−46
(note 1)
CDMA testsignal with peak to average ratio of 11.9 dB.
ACP is measured at +/- 885 kHz offset from the centre of the channel (2000 MHz) using a spectrum analyzer with a
resolution set to 30 kHz
Ruggedness in class-AB operation
The BLV2048 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the
following conditions: f
1
= 2000.0 MHz; f
2
= 2000.1 MHz; V
CE
= 26 V; I
CQ
= 2 x 300 mA; P
L
= 120 W (PEP); T
mb
= 25
°C.
12
G
P
(dB)
10
G
P
8
(1) (2) (3)
60
η
C
(%)
50
12
G
P
(dB)
10
(1)
G
P
60
η
C
(3)
(2)
(1)
(%)
50
η
C
40
8 (2)
40
η
C
6
30
6
(3)
30
4
20
4
20
2
10
2
10
0
0
20
40
60
80
100
0
120
140
P
L
(W)
0
0
20
40
60
80
100
0
120
140
P
L
(W)
(1) I
CQ
= 2x300 mA
(2) I
CQ
= 2x100 mA
(3) I
CQ
= 2x50 mA
V
CE
= 26 V; R1 = R2 = 0; f = 2000 MHz
(1) I
CQ
= 2x300 mA
(2) I
CQ
= 2x100 mA
(3) I
CQ
= 2x50 mA
V
CE
= 26 V; R1 = R2 = 2.4
Ω;
f = 2000 MHz
Fig.4
Power gain and collector efficiency as a
function of load power; typical values.
Fig.5
Power gain and collector efficiency as a
function of load power; typical values.
1999 Apr 23
5
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