BSM 200 GD 60 DN2
IGBT Power Module
Target data sheet
• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 200 GD 60 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 60 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 60 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
P
tot
700
+ 150
-40 ... + 125
≤
0.18
≤
0.36
2500
16
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
I
Cpuls
470
400
W
V
GE
I
C
235
200
Symbol
V
CE
V
CGR
600
± 20
A
Values
600
Unit
V
V
CE
600V
I
C
235A
Package
ECONOPACK 3
Ordering Code
Q67050-A0010-A67
1
Oct-23-1997
BSM 200 GD 60 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 4.5 mA
Collector-emitter saturation voltage
V
GE
= 15 V
I
C
= 200 A
T
j
= 25 °C
T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 600 V,
V
GE
= 0 V,
T
j
= 25 °C
V
CE
= 600 V,
V
GE
= 0 V,
T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 200 A
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
0.8
-
C
oss
-
1.3
-
C
iss
-
11
-
g
fs
50
-
-
nF
S
I
GES
-
-
0.5
I
CES
-
-
3
13
-
-
µA
-
-
2.1
2.2
2.7
2.8
mA
V
CE(sat)
V
GE(th)
4.5
5.5
6.5
V
Values
typ.
max.
Unit
2
Oct-23-1997
BSM 200 GD 60 DN2
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 200 A
R
Gon
= 10
Ω
Rise time
V
CC
= 300 V,
V
GE
= 15 V,
I
C
= 200 A
R
Gon
= 10
Ω
Turn-off delay time
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 200 A
R
Goff
= 10
Ω
Fall time
V
CC
= 300 V,
V
GE
= -15 V,
I
C
= 200 A
R
Goff
= 10
Ω
Free-Wheel Diode
Diode forward voltage
I
F
= 200 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 200 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time
I
F
= 200 A,
V
R
= -300 V,
V
GE
= 0 V
di
F
/dt = -1000 A/µs,
T
j
= 125 °C
Reverse recovery charge
I
F
= 200 A,
V
R
= -300 V,
V
GE
= 0 V
di
F
/dt = -1000 A/µs,
T
j
= 125 °C
-
10
-
Q
rr
-
150
-
µC
t
rr
V
F
-
-
1.9
1.7
2.4
-
ns
V
-
510
-
t
f
-
680
-
t
d(off)
-
190
-
t
r
-
200
-
t
d(on)
ns
Values
typ.
max.
Unit
3
Oct-23-1997
BSM 200 GD 60 DN2
Power dissipation
P
tot
=
ƒ(T
C
)
parameter:
T
j
≤
150 °C
750
W
650
P
tot
600
550
500
450
400
350
Safe operating area
I
C
=
ƒ(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
3
t
= 20.0µs
p
A
I
C
10
2
100 µs
1 ms
300
250
200
150
100
50
0
0
20
40
60
80
100
120
°C
160
10
0
0
10
10 ms
10
1
10
1
10
2
DC
V 10
3
T
C
V
CE
Collector current
I
C
=
ƒ(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
260
A
220
I
C
200
180
160
140
120
100
80
Transient thermal impedance
Z
th JC
=
ƒ(t
p
)
parameter:
D = t
p
/
T
10
0
IGBT
K/W
Z
thJC
10
-1
10
-2
D = 0.50
0.20
0.10
10
-3
0.05
0.02
single pulse
0.01
60
40
20
0
0
20
40
60
80
100
120
°C
160
10
-4
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
T
C
t
p
4
Oct-23-1997
BSM 200 GD 60 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 250 µs,
T
j
= 25 °C
400
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 250 µs,
T
j
= 125 °C
400
A
I
C
300
17V
15V
13V
11V
9V
7V
A
I
C
300
17V
15V
13V
11V
9V
7V
250
250
200
200
150
150
100
100
50
0
0
1
2
3
V
V
CE
5
50
0
0
1
2
3
V
V
CE
5
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 250 µs,
V
CE
= 20 V
400
A
I
C
300
250
200
150
100
50
0
0
2
4
6
8
10
V
14
V
GE
5
Oct-23-1997
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