SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BDS16SMD / BDS17SMD
•
•
•
High Voltage
Hermetic SMD1 (TO-276AB) Isolated Metal Package
Ideally suited for Power Linear, Switching
and general Purpose Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IE, IC
IB
PD
TJ
T stg
Collector – Base Voltage (IE = 0)
Collector – Emitter Voltage (IB = 0)
Emitter – Base Voltage (IC = 0)
Emitter, Collector Current
Base Current
Total Power Dissipation at
Junction Temperature Range
Storage Temperature Range
BDS16
120V
120V
BDS17
150V
150V
TC
=
25°C
5V
8A
2A
43.75W
+200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
4.0
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9549
Issue 1
Page 1 of 1
Website:
http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BDS16SMD / BDS17SMD
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
ICBO
ICEO
IEBO
VCEO(sus)
VCE(sat)
(1)
VBE(on)
hFE
(1)
(1)
(1)
Parameters
Collector Cut-Off Current
(IE = 0)
Collector Cut-Off Current
(IB = 0)
Emitter Cut-Off Current
(IC = 0)
Collector – Emitter
Sustaining Voltage (IB = 0)
Collector – Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Test Conditions
BDS16
BDS17
BDS16
BDS17
VCB = 120V
VCB = 150V
VCE = 60V
VCE = 75V
VEB = 5V
BDS16
BDS17
IC = 4.0A
IC = 0.5A
IC = 1.0A
IC = 0.5A
IC = 4A
IC = 100mA
IC = 100mA
IB = 0.4A
IB = 0.05A
VCE = 2.0V
VCE = 2.0V
VCE = 2.0V
Min.
Typ
Max.
20
0.1
0.1
10
Units
µA
mA
µA
V
120
150
1.5
0.4
1.0
40
15
250
150
V
V
DYNAMIC CHARACTERISTICS
fT
ton
ts
tf
Transition Frequency
IC = 0.5A
F = 20MHz
IC = 2A
IB1 = 0.2A
IC = 2A
IB1 = - IB2 = 0.2A
VCC = 80V
VCC = 80V
VCE = 10V
30
MHz
Turn-On Time
Storage Time
Fall Time
0.5
2.0
0.3
µs
Notes
(1) Pulse Width
≤
300us,
δ ≤
1.5%
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9549
Issue 1
Page 2 of 2
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BDS16SMD / BDS17SMD
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)
min.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
3.60 (0.142)
Max.
4.14 (0.163)
3.84 (0.151)
1
3
0.76
(0.030)
min.
10.69 (0.421)
10.39 (0.409)
2
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
SMD1 (TO-276AB)
Underside View
Pad 1 – Base
Pad 2 – Collector
Pad 3 - Emitter
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9549
Issue 1
Page 3 of 3
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