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IRKH250-04N

Description
Silicon Controlled Rectifier, 555A I(T)RMS, 250000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, POWER, MAGN-A-PAK-5
CategoryAnalog mixed-signal IC    Trigger device   
File Size319KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRKH250-04N Overview

Silicon Controlled Rectifier, 555A I(T)RMS, 250000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, POWER, MAGN-A-PAK-5

IRKH250-04N Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PUFM-D3
Contacts5
Reach Compliance Codeunknown
Other featuresUL APPROVED
Shell connectionISOLATED
Nominal circuit commutation break time150 µs
ConfigurationSINGLE WITH BUILT-IN FREE-WHEELING DIODE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Quick connection descriptionG-GR
Description of screw terminalsA-K-AK
Maximum holding current500 mA
JESD-30 codeR-PUFM-D3
Maximum leakage current50 mA
Humidity sensitivity level1
On-state non-repetitive peak current8500 A
Number of components1
Number of terminals3
Maximum on-state current250000 A
Maximum operating temperature130 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum rms on-state current555 A
Maximum repetitive peak off-state leakage current50000 µA
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
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