TLP284
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP284
Programmable Controllers
AC/DC-Input Module
Hybrid ICs
TLP284 consist of photo transistor, optically coupled to two infrared emitting
diode connected inverse parallel, and can operate directly by AC input
current.
Since TLP284 are guaranteed wide operating temperature (Ta=-55 to 110 ˚C)
and high isolation voltage (3750 Vrms), it’s suitable for high-density surface
mounting applications such as programmable controllers and hybrid ICs.
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•
•
•
•
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Collector-emitter voltage : 80 V (min)
Current transfer ratio
Rank GB
Isolation voltage
UL-recognized
cUL-recognized
VDE-approved
: 50% (min)
: 100% (min)
: 3750 Vrms (min)
: UL 1577, File No.E67349
: CSA Component Acceptance Service No.5A
File No.E67349
: EN 60747-5-5 (Note 1)
TOSHIBA
11-3A1
Weight: 0.05 g (typ.)
Unit in mm
Guaranteed performance over -55 to 110 ˚C
Pin Configuration (top view)
1
4
3
Note 1: When a VDE approved type is needed,
please designate the
Option(V4).
Construction Mechanical Rating
Creepage Distance
Clearance
Insulation Thickness
5.0 mm (min)
5.0 mm (min)
0.4 mm (min)
2
1 : Anode
Cathode
2 : Cathode
Anode
3 : Emitter
4 : Collector
Start of commercial production
© 2019
Toshiba Electronic Devices & Storage Corporation
2008-12
1
2019-06-17
TLP284
Current Transfer Ratio
TYPE
Classi-
Fication
(Note1)
Blank
Rank Y
TLP284
Rank GR
Rank BL
Rank GB
Current Transfer Ratio (%) (I
C
/ I
F
)
I
F
= 5 mA, V
CE
= 5 V, Ta = 25°C
Min
50
50
100
200
100
Max
600
150
300
600
600
Blank, YE, GR, BL, GB
YE
GR
BL
GB, GR, BL
Marking of Classification
Note1: Ex. rank GB: TLP284 (GB)
Note: Application type name for certification test, please use standard product type name, i.e.
TLP284 (GB): TLP284
Note: For the supply status of rank Y and BL products, please contact with our sales representative.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Forward current
Forward current derating
Pulse forward current
LED
Diode power dissipation
Diode power dissipation derating
(Ta ≥ 75°C)
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Detector
Collector current
Collector power dissipation
Collector power dissipation
derating
(Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
(10 s)
(Ta ≥ 75°C)
(Note 1)
Symbol
I
F(RMS)
ΔI
F
/°C
I
FP
P
D
Rating
±50
-1.0
±1
100
-2.0
125
80
7
50
150
-1.5
125
-55 to 125
-55 to 110
260
200
-2.0
3750
Unit
mA
mA/°C
A
mW
mW/°C
°C
V
V
mA
mW
mW/°C
°C
°C
°C
°C
mW
mW/°C
Vrms
Δ
P
D
/°C
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/°C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/°C
BV
S
Total package power dissipation
Total package power dissipation derating
(Ta ≥ 25°C)
Isolation voltage
(Note 2)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width ≤ 100 μs, frequency 100 Hz
Note 2: AC, 60 s, R.H.≤ 60 %,
Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
© 2019
Toshiba Electronic Devices & Storage Corporation
2
2019-06-17
Electrical Characteristics (Ta = 25°C)
Characteristic
LED
Forward voltage
Capacitance
Collector-emitter
breakdown voltage
Emitter-collector
breakdown voltage
Symbol
V
F
C
T
V
(BR)CEO
V
(BR)ECO
Test Condition
I
F
= ±10 mA
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V,
Ambient light below
(100 ℓx)
V
CE
= 48 V, Ta = 85 °C
Ambient light below
(100 ℓx)
V = 0 V, f = 1 MHz
Min
1.0
―
80
7
―
―
―
Typ.
1.15
60
―
―
0.01
(2)
2
(4)
10
TLP284
Max
1.3
—
—
—
0.1
(10)
50
(50)
―
Unit
V
pF
V
V
μA
μA
pF
Detector
Collector dark current
(Note 2)
I
CEO
(Note 1)
(Note 1)
Capacitance
(collector to emitter)
C
CE
Note 1: Irradiation to marking side using standard light bulb.
Note 2: Because of the construction, leak current might be increased by ambient light. Please use photocoupler
with less ambient light.
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/I
F
Test Condition
I
F
= ±5 mA, V
CE
= 5 V
Rank GB
IF = ±1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= ±8 mA
Collector-emitter
saturation voltage
Off-state collector current
CTR symmetry
V
CE(sat)
I
C
= 0.2 mA, I
F
= ±1 mA
Rank GB
I
C(off)
I
C(ratio)
V
F
= 0.7 V, V
CE
= 48 V
I
C
(I
F
= -5 mA) / I
C
(I
F
= 5 mA)
(Note 1)
MIn
50
100
—
30
—
—
—
—
0.33
Typ.
—
—
60
—
—
0.2
—
—
—
Max
600
600
—
—
0.4
—
0.4
10
3
μA
—
V
Unit
%
Saturated CTR
I
C
/I
F(sat)
%
Note 1:
I
F1
I
F2
I
C1
I
C2
V
CE
I (I
=
I , V
=
5V)
IC(ratio)
=
C2 F F2 CE
IC1(IF
=
IF1, VCE
=
5V)
© 2019
Toshiba Electronic Devices & Storage Corporation
3
2019-06-17
TLP284
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Test Condition
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.≤ 60 %
AC, 60 s
Min
—
1×10
12
3750
Typ.
0.8
10
14
—
Max
—
—
—
Unit
pF
Ω
Vrms
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= ±16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
Ω
Test Condition
Min
—
—
—
—
—
—
—
Typ.
2
3
3
3
2
25
40
Max
—
—
—
—
—
—
—
μs
μs
Unit
Fig. 1: Switching time test circuit
I
F
R
L
V
CC
V
CE
I
F
V
CE
t
ON
t
S
V
CC
4.5V
0.5V
t
OFF
© 2019
Toshiba Electronic Devices & Storage Corporation
4
2019-06-17
TLP284
I F - Ta
100
P C - Ta
200
180
160
Allowable collector power
Dissipation PC (mW)
I F (mA)
80
60
40
20
0
-20
0
20
40
60
80
100
120
140
120
100
80
60
40
20
0
-20
0
20
40
60
80
100
120
Allowable forward current
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
IFP-DR
IF-VF
3000
(mA)
PULSE WIDTH
Ta=25˚C
100
I
FP
1000
500
300
100
50
30
10
I
F
(mA)
≤100μs
10
Pulse forward current
Forward current
1
100˚C
75˚C
50˚C
25˚C
0˚C
-25˚C
-50˚C
0.1
10
-3
10
-2
10
-1
10
0
0.6
0.8
1
1.2
1.4
1.6
Duty cycle ratio D
R
∆ V F / ∆ Ta - I F
-3.2
Forward voltage temperature coefficient
ΔV
F /ΔTa (mV/°C)
1000
Forward voltage V
F
IFP – VFP
(V)
-2.8
-2.4
-2
-1.6
-1.2
-0.8
-0.4
0.1
0.5
I
FP
(mA)
100
Pulse forward current
10
Pulse width≤10μs
Repetitive
Frequency=100Hz
Ta=25°C
1
1
5
10
50
0.6
1
1.4
1.8
2.2
2.6
3
Forward current
I
F
(mA)
Pulse forward voltage V
FP
(V)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
Toshiba Electronic Devices & Storage Corporation
5
2019-06-17
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