Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
(note3)
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
I
F
= 5.5 A, d
iF
/d
t
= 100 A/µs
0.8
16
6
1.3
1.2
32
A
V
nS
nC
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 78°C/W when mounted
on a 0.5 in
2
pad of 2 oz
copper
b) 125°C/W when
mounted on a 0.02 in
2
pad of 2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
3. Trr parameter will not be subjected to 100% production testing.
2
FDS6930B Rev. A1
www.fairchildsemi.com
FDS6930B Dual N-Channel Logic Level PowerTrench
®
MOSFET
Typical Characteristics
20
2
V
GS
= 10V
16
4.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
I
D
, DRAIN CURRENT (A)
6.0V
12
4.5V
V
GS
= 3.5V
1.6
3.5V
1.4
4.0V
4.5V
5.0V
6.0V
10.0V
8
3.0V
4
1.2
1
0
0
0.5
1
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
0.8
0
4
8
12
I
D
, DRAIN CURRENT (A)
16
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.4
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 5.5A
V
GS
= 10.0V
I
D
= 2.75A
0.1
1.2
0.08
T
A
= 125°C
0.06
1
0.8
0.04
T
A
= 25°C
0.02
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
20
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
16
V
GS
= 0V
10
T
A
= 125°C
25°C
-55°C
0.01
I
D
, DRAIN CURRENT (A)
1
12
0.1
8
T
A
= 125° C
4
25°C
0
1
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
5
-55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
FDS6930B Rev. A1
www.fairchildsemi.com
FDS6930B Dual N-Channel Logic Level PowerTrench
®
MOSFET
Typical Characteristics
10
I
D
= 5.5A
500
f = 1 MHz
V
GS
= 0 V
400
15V
V
DS
= 5V
V
GS
, GATE-SOURCE VOLTAGE (V)
8
CAPACITANCE (pF)
6
10V
4
300
C
iss
200
C
oss
100
C
rss
2
0
0
1
2
3
4
Q
g
, GATE CHARGE (nC)
5
6
0
0
5
10
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 7. Gate Charge Characteristics.
100
100µs
P(pk), PEAK TRANSIENT POWER (W)
50
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
40
1ms
10ms
100ms
1s
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
30
1
DC
V
GS
= 10.0V
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
10s
20
0.1
10
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
0.2
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 135°C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
FDS6930B Rev. A1
www.fairchildsemi.com
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