HITFET
BTS 333
Smart Lowside Power Switch
Features
•
Logic Level Input
•
Input Protection (ESD)
•
Temperature limitation
adjustable by input voltage
•
Overload protection
•
Short circuit protection
•
Overvoltage protection
•
Current limitation
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(ISO)
E
AS
42
18
19
2
V
mΩ
A
J
•
Analog driving possible
Application
•
All kinds of resistive, inductive and capacitive loads in switching or linear
applications
•
µC compatible power switch for 12 V and 24 V DC applications
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
technology. Fully protected by embedded
protection functions.
Pin
1
2
3
TAB
Symbol
IN
DRAIN
SOURCE
DRAIN
Function
Input
Output to the load
Ground
Output to the load
Page 1
Nov-03-2000
BTS 333
Block Diagram
V
bb
M
BTS333
Overvoltage-
Protection
Drain
Pin 2 and TAB
In
Pin 1
Gate-Control
Current
limitation +
Short circuit
Protection
Pin 3
Source
ESD
Temperature
Control
Page 2
Nov-03-2000
BTS 333
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter
Symbol
V
DS
V
DS(SC)
Value
Unit
Drain source voltage
Drain source voltage for full SCP
SCP Type I,
V
IN
≤
10V
SCP Type II,
V
IN
≤
7V
Continuous input current
-0.2V
≤
V
IN
≤
10V
V
IN
< -0.2V or
V
IN
> 10V
42
36
24
V
I
IN
mA
no limit
|
I
IN
|
≤
4
Operating temperature
1)
Storage temperature
Power dissipation
T
C
= 85 °C
T
j
T
stg
P
tot
E
AS
-40 ...+175
-55 ... +150
100
°C
W
J
Unclamped single pulse inductive energy
2)
I
D
= 19 A,
T
j
= 25 °C,
V
bb
= 12 V
I
D
= 19 A,
T
j
= 150 °C,
V
bb
= 12 V
2
0.5
V
LD
Load dump protection
V
LoadDump3)
=
V
A
+
V
S
V
IN
= 0 and 10 V, t
d
= 400 ms,
R
I
= 2
Ω
,
R
L
= 1
Ω
,
V
A
= 13.5 V
55
V
E
lectro
s
tatic
d
ischarge voltage
(Human Body Model)
V
ESD
according to MIL STD 883D, method 3015.7 and
2
kV
EOS/ESD assn. standard S5.1 - 1993
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
E
40/150/56
Thermal resistance
junction - case:
junction - case:
R
thJC
R
thJA
0.8
75
K/W
1Temperatures above 175°C will reduce lifetime of the device
2 Not tested, specified by design.
3
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 408
Page 3
Nov-03-2000
BTS 333
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150,
I
D
= 10 mA
Off-state drain current
V
DS
= 32 V,
T
j
=-40 ... +85°C ,
V
IN
= 0 V
V
DS
= 32 V,
T
j
=-40 ... +150°C ,
V
IN
= 0 V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 1.9 mA,
T
j
= -40 °C
I
D
= 1.9 mA,
T
j
= 25 °C
On state input current (temp. limit. inactiv)
V
IN
= 10 V
V
IN
= 5 V
On-state resistance
V
IN
= 5 V,
I
D
= 19 A,
T
j
= 25 °C
V
IN
= 5 V,
I
D
= 19 A,
T
j
= 150 °C
On-state resistance
V
IN
= 10 V,
I
D
= 19 A,
T
j
= 25 °C
V
IN
= 10 V,
I
D
= 19 A,
T
j
= 150 °C
Nominal load current
V
IN
= 10 V,
T
j
< 150°C,
T
A
= 85 °C
Continuous drain current
1)
T
C
= 120 °C,
V
IN
= 10 V
Current limit (active if
V
DS
>2.5 V)
2)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 300 µs
I
D(lim)
35
50
65
I
D
25
-
-
I
D(ISO)
R
DS(on)
-
-
19
14
26
-
18
36
-
A
R
DS(on)
-
-
18
29
23
46
I
IN(on)
-
-
200
10
300
30
m
Ω
V
GS(th)
-
1.3
-
1.7
2.4
2.2
µA
I
DSS
-
-
1
1
5
20
V
µA
V
DS(AZ)
42
-
55
V
Symbol
min.
Values
typ.
max.
Unit
1if not limited by current limitation
2Device switched on into existing short circuit (see diagram Determination of D(lim) ). If the device is in on condition
I
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Page 4
Nov-03-2000
BTS 333
Electrical Characteristics
Parameter
at
T
j
= 25°C, unless otherwise specified
Dynamic Characteristics
Turn-on time
Turn-off time
Slew rate on
Slew rate off
V
IN
to 90%
I
D
:
V
IN
to 10%
I
D
:
t
on
t
off
-dV
DS
/dt
on
dV
DS
/dt
off
-
-
-
-
140
250
0.1
0.2
250
350
1
1
V/µs
µs
R
L
= 2
Ω,
V
IN
= 0 to 10 V,
V
bb
= 12 V
R
L
= 2
Ω,
V
IN
= 10 to 0 V,
V
bb
= 12 V
70 to 50%
V
bb
:
R
L
= 2
Ω,
V
IN
= 0 to 10 V,
V
bb
= 12 V
50 to 70%
V
bb
:
R
L
= 2
Ω,
V
IN
= 10 to 0 V,
V
bb
= 12 V
Protection Functions
Input current protection mode
V
IN
= 5 V
V
IN
= 10 V
I
IN(Prot)
-
-
--
-
300
400
µA
Symbol
min.
Values
typ.
max.
Unit
Inverse Diode
Inverse diode forward voltage
t
m
= 250 µs,
V
IN
= 0 V
, -
I
D
= 5*19 A,
t
P
= 300 µs
V
SD
-
1.0
-
V
Page 5
Nov-03-2000
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