UBSS123A datasheet, PDF - EEWORLD Datasheet

UBSS123A: DescriptionSmall Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size27KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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UBSS123A Overview

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	0.17 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

	UBSS123A
Description	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it Rohs certified?	conform to
Maker	Diodes
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	0.17 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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