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BSD212: DescriptionTRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size21KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72, FET General Purpose Small Signal

BSD212 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SUBSTRATE
Configuration	SINGLE
Minimum drain-source breakdown voltage	10 V
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	45 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	125 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE	SUBSTRATE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	10 V	30 V	20 V	20 V	30 V	10 V	20 V
Maximum drain current (ID)	0.05 A	0.025 A	0.05 A	0.05 A	0.02 A	0.05 A	0.05 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-72	TO-72	TO-72	TO-72	TO-72	TO-72	TO-72
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	DEPLETION MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	DEPLETION MODE	ENHANCEMENT MODE	DEPLETION MODE
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	AMPLIFIER	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	NXP	-	NXP	NXP	-	NXP	NXP
Maximum drain-source on-resistance	45 Ω	50 Ω	45 Ω	45 Ω	-	45 Ω	30 Ω

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