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RN1709(TE85R)

Description
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size114KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN1709(TE85R) Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal

RN1709(TE85R) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G5
Contacts5
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 2.14
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G5
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz

RN1709(TE85R) Related Products

RN1709(TE85R) RN1708(TE85L) RN1709(TE85L)
Description TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN, BIP General Purpose Small Signal
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
Contacts 5 5 5
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 2.14 BUILT-IN BIAS RESISTOR RATIO IS 0.468 BUILT-IN BIAS RESISTOR RATIO IS 2.14
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 70 80 70
JESD-30 code R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
Number of components 2 2 2
Number of terminals 5 5 5
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz

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