IRFNJ5305
MECHANICAL DATA
Dimensions in mm (inches)
7.54 (0.296)
0.76 (0.030)
min.
2.41 (0.095)
2.41 (0.095)
0.127 (0.005)
3.175 (0.125)
Max.
P–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
-55V
-22A
Ω
0.065Ω
3.05 (0.120)
1
3
10.16 (0.400)
0.76
(0.030)
min.
5.72 (.225)
2
0.127 (0.005)
16 PLCS
0.50(0.020)
7.26 (0.286)
0.127 (0.005)
FEATURES
0.50 (0.020)
max.
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
SMD05 (TO-276AA)
PAD1 = SOURCE
PAD 2 = DRAIN
PAD3 = GATE
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
R
θJC
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
±20V
-22A
-16A
-88A
75W
0.6W/°C
–55 to 150°C
1.67°C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Document Number 5607
Issue 1
IRFNJ5305
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Parameter
BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Breakdown Voltage
Static Drain – Source On–State
Resistance
V
DS
= V
GS
V
DS
≥
-25V
V
DS
= -55V
V
DS
= -44V
V
GS
= -20V
V
GS
= 20V
V
GS
= 0
V
DS
= -25V
f = 1MHz
V
GS
= -10V
V
DS
= -44V
I
D
= -16A
V
DD
= -28V
I
D
= -16A
R
G
= 6.8Ω
1290
495
203
70
17
30
26
125
56
74
-22*
-88
I
S
= -16A
V
GS
= 0
I
S
= -16A
T
J
= 25°C
d
i
/ d
t
≤
-100A/µs V
DD
≤
-30V
T
J
= 25°C
-1.3
100
250
ns
nC
pF
T
J
= 125°C
I
D
= -250µA
I
DS
= -6A
-2
8
-25
-250
-100
100
-4
Forward Transconductance
Zero Gate Voltage Drain Current
(V
GS
= 0)
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
V
GS
= 0
I
D
= -1mA
V
GS
= -10V
I
D
= -16A
I
D
= -250µA
Min.
-55
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
Reference to 25°C
-0.049
0.065
V / °C
Ω
V
S(Ω
µA
nA
)
Ω
(
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
A
V
ns
nC
*
Current Limited by package
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Document Number
5607Issue 1
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