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CMXSH-3LEADFREE

Description
Rectifier Diode, Schottky, 3 Element, 0.1A, 30V V(RRM), Silicon, PLASTIC, SUPERMINI-6
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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CMXSH-3LEADFREE Overview

Rectifier Diode, Schottky, 3 Element, 0.1A, 30V V(RRM), Silicon, PLASTIC, SUPERMINI-6

CMXSH-3LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
package instructionPLASTIC, SUPERMINI-6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSEPARATE, 3 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components3
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceMATTE TIN (315)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10

CMXSH-3LEADFREE Preview

CMXSH-3
SURFACE MOUNT
SUPERmini
TM
TRIPLE ISOLATED
SILICON SCHOTTKY
DIODES
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXSH-3
type contains three (3) Isolated Schottky Silicon
Switching Diodes, manufactured by the epitaxial
planar process, epoxy molded in a
SUPERmini™ surface mount package,
designed for applications requiring low forward
voltage drop.
MARKING CODE: XH3
SOT-26 CASE
MAXIMUM RATINGS
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=10 ms
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ
JA
-65 to +150
357
°C
°C/W
SYMBOL
VRRM
IF
IFRM
IFSM
PD
30
100
350
750
350
UNITS
V
mA
mA
mA
mW
ELECTRICAL CHARACTERISTICS PER DIODE
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IR
IR
BVR
VF
VF
VF
CT
trr
VR=25V
VR=25V, TA=100°C
IR=100µA
IF=2.0mA
IF=15mA
IF=100mA
VR=1.0V, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
30
0.29
0.40
0.74
7.0
5.0
0.33
0.45
1.00
90
25
500
100
UNITS
nA
µA
V
V
V
V
pF
ns
R4 (3-June 2005)
Central
TM
CMXSH-3
SURFACE MOUNT
SUPERmini
TM
TRIPLE ISOLATED
SILICON SCHOTTKY
DIODES
Semiconductor Corp.
SOT-26 CASE - MECHANICAL OUTLINE
Pin Configuration
6
5
4
D1
D2
D3
1
2
3
LEAD CODE
1) ANODE D1
2) ANODE D2
3) ANODE D3
4) CATHODE D3
5) CATHODE D2
6) CATHODE D1
MARKING CODE: XH3
R4 (3-June 2005)

CMXSH-3LEADFREE Related Products

CMXSH-3LEADFREE CMXSH-3BK
Description Rectifier Diode, Schottky, 3 Element, 0.1A, 30V V(RRM), Silicon, PLASTIC, SUPERMINI-6 Rectifier Diode, Schottky, 3 Element, 0.1A, 30V V(RRM), Silicon, PLASTIC, SUPERMINI-6
Maker Central Semiconductor Central Semiconductor
package instruction PLASTIC, SUPERMINI-6 PLASTIC, SUPERMINI-6
Contacts 6 6
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Configuration SEPARATE, 3 ELEMENTS SEPARATE, 3 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e3 e0
Number of components 3 3
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 0.1 A 0.1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.35 W 0.35 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 30 V 30 V
Maximum reverse recovery time 0.005 µs 0.005 µs
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface MATTE TIN (315) TIN LEAD
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
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