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4GBU01F

Description
4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size101KB,5 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

4GBU01F Overview

4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

4GBU01F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionR-PSFM-T4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSFM-T4
JESD-609 codee0
Maximum non-repetitive peak forward current158 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
PART OBSOLETE - EOL18
Bulletin I2717 rev. G 05/02
4GBU Series
4.0 Amps Single Phase Full Wave
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 V
RMS
)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
Bridge Rectifier
I
O(AV)
= 4A
V
RRM
= 50/ 800V
Description
These GBU Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters
I
O
@ T
C
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
4GBU
4
100
150
158
113
104
50 to 800
- 55 to 150
Units
A
°
C
A
A
A
2
s
A
2
s
V
o
4GBU
C
www.irf.com
1

4GBU01F Related Products

4GBU01F 4GBU 4GBU005F 4GBU02F 4GBU04F 4GBU06F 4GBU08F
Description 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible incompatible
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Reach Compliance Code unknown - unknown unknown unknown unknown unknown
Other features UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON - SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V - 1 V 1 V 1 V 1 V 1 V
JESD-30 code R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
JESD-609 code e0 - e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 158 A - 158 A 158 A 158 A 158 A 158 A
Number of components 4 - 4 4 4 4 4
Phase 1 - 1 1 1 1 1
Number of terminals 4 - 4 4 4 4 4
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 4 A - 4 A 4 A 4 A 4 A 4 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V - 50 V 200 V 400 V 600 V 800 V
surface mount NO - NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE
Base Number Matches 1 - 1 1 1 1 1
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