Variable Capacitance Diode, High Frequency to Very High Frequency, 110pF C(T), 22V, Silicon, Hyperabrupt, DO-7,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 22 V |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 5% |
| Minimum diode capacitance ratio | 5.9 |
| Nominal diode capacitance | 110 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | HIGH FREQUENCY TO VERY HIGH FREQUENCY |
| JEDEC-95 code | DO-7 |
| JESD-30 code | O-LALF-W2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| minimum quality factor | 80 |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Varactor Diode Classification | HYPERABRUPT |
| KV2301A | KV2201A | KV2601A | KV2701A | KV2401A | KV2501A | KV2001A | |
|---|---|---|---|---|---|---|---|
| Description | Variable Capacitance Diode, High Frequency to Very High Frequency, 110pF C(T), 22V, Silicon, Hyperabrupt, DO-7, | Variable Capacitance Diode, High Frequency to Very High Frequency, 50pF C(T), 22V, Silicon, Hyperabrupt, DO-7 | Variable Capacitance Diode, High Frequency to Very High Frequency, 300pF C(T), 22V, Silicon, Hyperabrupt, DO-14, | Variable Capacitance Diode, High Frequency to Very High Frequency, 500pF C(T), 22V, Silicon, Hyperabrupt, DO-14, | Variable Capacitance Diode, High Frequency to Very High Frequency, 155pF C(T), 22V, Silicon, Hyperabrupt, DO-7, | Variable Capacitance Diode, High Frequency to Very High Frequency, 200pF C(T), 22V, Silicon, Hyperabrupt, DO-7, | Variable Capacitance Diode, High Frequency to Very High Frequency, 20pF C(T), 22V, Silicon, Hyperabrupt, DO-7, |
| Reach Compliance Code | compliant | unknown | compliant | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Minimum breakdown voltage | 22 V | 22 V | 22 V | 22 V | 22 V | 22 V | 22 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode Capacitance Tolerance | 5% | 5% | 5% | 5% | 5% | 5% | 5% |
| Minimum diode capacitance ratio | 5.9 | 5.6 | 6 | 6 | 5.8 | 5.8 | 5.4 |
| Nominal diode capacitance | 110 pF | 50 pF | 300 pF | 500 pF | 155 pF | 200 pF | 20 pF |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| frequency band | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY | HIGH FREQUENCY TO VERY HIGH FREQUENCY |
| JEDEC-95 code | DO-7 | DO-7 | DO-14 | DO-14 | DO-7 | DO-7 | DO-7 |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| minimum quality factor | 80 | 125 | 40 | 30 | 70 | 60 | 160 |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Varactor Diode Classification | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT |
| Is it lead-free? | Contains lead | - | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | - | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Microsemi | Microsemi | - | - | Microsemi | Microsemi | Microsemi |
| package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | - | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Maximum operating temperature | 125 °C | - | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | - | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |