PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA804T
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The 2SC4571 has built-in 2 transistors which were developed for UHF.
PACKAGE DRAWINGS
(Unit: mm)
FEATURES
• High f
T
f
T
= 5.0 GHz TYP. (@ V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz)
0.65 0.65
2.1±0.1
1.25±0.1
1.3
C
ob
= 0.9 pF TYP. (@ V
CB
= 5 V, I
E
= 0, f = 1 MHz)
• A surface Mounting Package Adopted
• Built-in 2 Transistors (2
×
2SC4571)
2.0±0.2
2
3
0.9±0.1
ORDERING INFORMATION
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
0.7
4
5
µ
PA804T
PIN CONFIGURATION (Top View)
µ
PA804T-T1
Taping products
(3 KPCS/Reel)
6
Q
1
5
4
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
0~0.1
Q
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
20
12
3
60
120 in 1 element
160 in 2 elements
Note
125
–55 to 125
UNIT
V
V
V
mA
mW
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
4. Emitter (Q2)
2. Emitter (Q1)
5. Base (Q2)
3. Collector (Q2)
6. Base (Q1)
Junction Temperature
Storage Temperature
T
j
T
stg
˚C
˚C
Note
90 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. ID-3638
(O.D. No. ID-9145)
Date Published April 1995 P
Printed in Japan
©
0.15
–0
+0.1
0.2
–0
1
6
• Small Collector Capacitance
+0.1
X Y
1995
µ
PA804T
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
Collector to Emitter
Saturation Voltage
DC Current Gain
Gain Bandwidth Product (1)
Feed-back Capacitance
Insertion Power Gain (1)
h
FE
Ratio
SYMBOL
I
CBO
I
EBO
V
CE (sat)
CONDITION
V
CB
= 15 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
h
FE
= 10, I
C
= 5 mA
V
CE
= 5 V, I
C
= 5 mA
Note 1
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 5 V, I
C
= 5 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
5
0.85
MIN.
TYP.
MAX.
0.1
0.1
0.5
UNIT
µ
A
µ
A
V
h
FE
f
T
C
re
|S
21
|
2
h
FE1
/h
FE2
60
3
5
0.9
200
GHz
1.2
pF
dB
Notes 1.
Pulse Measurement: Pw
≤
350
µ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
T76
60 to 120
GB
T77
100 to 200
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
P
T
–T
A
Characteristics
24
I
C
–V
BE
Characteristics
Free Air
V
CE
= 5 V
Total Power Dissipation P
T
(mW)
150
160 mW
120 mW
Collector Current I
C
(mA)
100
150
100
Pe
rE
2
El
en
em
ts
en
t
le
m
16
in
To
l
ta
50
8
0
50
0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(°C)
Base to Emitter Voltage V
BE
(V)
2
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