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Datasheet> All Categories > Discrete semiconductor> The transistor> SI4340DY-T1-GE3
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SI4340DY-T1-GE3

Description
Small Signal Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size221KB，13 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

SI4340DY-T1-GE3 Overview

Small Signal Field-Effect Transistor,

SI4340DY-T1-GE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codeunknown
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED

SI4340DY-T1-GE3 Preview

Si4340DY
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
Channel-1
20
Channel-2
R
DS(on)
(Ω)
0.012 at V
GS
= 10 V
0.0175 at V
GS
= 4.5 V
0.010 at V
GS
= 10 V
0.0115 at V
GS
= 4.5 V
I
D
(A)
9.6
7.8
13.5
12.8
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
20
V
SD
(V)
Diode Forward Voltage
0.53 V at 3 A
I
F
(A)
2.0
• DC/DC Converters
- Game Stations
- Notebook PC Logic
SO-14
D
1
D
1
G
1
G
2
S
2
S
2
S
2
1
2
3
4
5
6
7
Top View
Ordering Information:
Si4340DY-T1-E3 (Lead (Pb)-free)
Si4340DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
14
13
12
11
10
9
8
S
1
S
1
D
2
D
2
D
2
D
2
D
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
G
1
G
2
Schottky Diode
D
1
D
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Channel-1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.8
2.0
1.28
9.6
7.7
40
1.04
1.14
0.73
2.73
3.0
1.9
- 55 to 150
± 20
7.3
5.8
13.5
10.8
50
1.30
1.43
0.91
W
°C
10 s
Steady State
20
± 16
9.9
7.5
A
10 s
Channel-2
Steady State
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72376
S09-2436-Rev. C, 16-Nov-09
www.vishay.com
1
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typ.
53
92
35
Max.
62.5
110
42
Channel-2
Typ.
35
72
18
Max.
42
87
23
Schottky
Typ.
40
76
21
Max.
48
93
25
°C/W
Unit
Si4340DY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 9.6 A
V
GS
= 10 V, I
D
= 13.5 A
V
GS
= 4.5 V, I
D
= 7.8 A
V
GS
= 4.5 V, I
D
= 12.8 A
V
DS
= 15 V, I
D
= 9.6 A
V
DS
= 15 V, I
D
= 13.5 A
I
S
= 1.8 A, V
GS
= 0 V
I
S
= 2.73 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
0.8
2.00
1.90
100
100
1
100
15
4000
V
nA
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
µA
20
30
0.0095
0.007
0.0135
0.0085
25
38
0.74
0.485
10
17
3.3
4.5
3.1
4.5
0.9
1.4
15
24
16
22
42
68
16
19
35
38
0.012
0.010
0.0175
0.0115
A
Drain-Source On-State Resistance
b
R
DS(on)
Ω
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
g
fs
V
SD
S
1.1
0.53
15
25
nC
V
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Channel-1
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 9.6 A
Channel-2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= - 13.5 A
f = 1 MHz
Channel-1
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
Channel-2
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
I
F
= 1.8 A, dI/dt = 100 A/µs
I
F
= 2.73 A, dI/dt = 100 µA/µs
0.45
0.7
1.35
2.1
25
35
25
35
65
100
25
30
60
65
Ω
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
I
rm
C
T
Test Conditions
I
F
= 3 A
I
F
= 3 A, T
J
= 125 °C
V
R
= 20 V
V
R
= 20 V, T
J
= 75 °C
V
R
= - 20 V, T
J
= 125 °C
V
R
= 15 V
Min.
Typ.
0.485
0.42
0.008
0.4
6.5
102
Max.
0.53
0.42
0.100
5
20
Unit
V
Maximum Reverse Leakage Current
Junction Capacitance
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72376
S09-2436-Rev. C, 16-Nov-09
Si4340DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
50
V
GS
= 10 V thru 4 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
40
25 °C, unless otherwise noted
50
30
30
20
3V
20
T
C
= 125 °C
10
T
C
= 25 °C
10
2V
0
0
1
2
3
4
5
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.020
1800
Transfer Characteristics
- On-Resistance (Ω)
0.016
V
GS
= 4.5 V
0.012
V
GS
= 10 V
0.008
C - Capacitance (pF)
1500
C
iss
1200
900
DS(on)
600
C
rss
C
oss
R
0.004
300
0.000
0
10
20
30
40
50
I
D
- Drain Current (A)
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
I
D
= 9.6 A
V
GS
- Gate-to-Source Voltage (V)
5
R
DS(on)
- On-Resistance
1.4
1.6
I
D
= 9.6 A
Capacitance
(Normalized)
4
V
DS
= 10 V
3
V
GS
= 10 V
1.2
1.0
2
0.8
1
0.6
- 50
0
0.0
2.6
5.2
7.8
10.4
13.0
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 72376
S09-2436-Rev. C, 16-Nov-09
www.vishay.com
3
Si4340DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.040
0.035
I
D
= 9.6 A
0.030
0.025
0.020
0.015
0.010
0.005
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
10
T
J
= 25 °C
Source-Drain Diode Forward Voltage
0.4
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
- Variance (V)
I
D
= 250 µA
0.0
Power (W)
160
120
- 0.2
80
- 0.4
40
- 0.6
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
10 s
DC
0.1
T
C
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
www.vishay.com
4
Document Number: 72376
S09-2436-Rev. C, 16-Nov-09
Si4340DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
2. Per Unit Base = R
thJA
= 92 °C/W
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72376
S09-2436-Rev. C, 16-Nov-09
www.vishay.com
5
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