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UMIL70

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size160KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

UMIL70 Overview

Transistor

UMIL70 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instruction,
Contacts6
Reach Compliance Codecompliant

UMIL70 Preview

UMIL 70
70 Watts, 28 Volts, Class AB
Defcom 225 - 400
MHz
GENERAL DESCRIPTION
The UMIL70 is a double input matched COMMON EMITTER broadband
transistor specifically intended for use in the 225-400 MHz frequency band. It
may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure ruggedness and high reliability.
CASE OUTLINE
55HU, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces Collector to Emiter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
140 Watts
60 Volts
4.0 Volts
8.0 A
- 65 to +150
o
C
+200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
η
c
VSWR
CHARACTERISTICS
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 400 MHz
Vcc = 28 Volts
MIN
70
10
8.5
60
F = 400 MHz
10
5:1
TYP
MAX
UNITS
Watts
Watts
dB
%
BVebo
BVces
BVceo
Cob
h
FE
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 50 mA
Ie = 50 mA
Vcb = 28 V, F = 1 MHz
Vce = 5 V, Ic = 2 A
4.0
60
33
76
20
1.25
Volts
Volts
Volts
pF
o
C/W
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UMIL70
August 1996
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