UMT18NTR datasheet, PDF - EEWORLD Datasheet

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UMT18NTR: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, SC-88, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size65KB，4 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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UMT18NTR Overview

Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, SC-88, 6 PIN

UMT18NTR Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
Parts packaging code	SC-88
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	13 weeks
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	12 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	270
JESD-30 code	R-PDSO-G6
JESD-609 code	e2
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Copper (Sn/Cu)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	260 MHz

UMT18NTR Preview

EMT18 / UMT18N / IMT18

Transistors

General purpose transistors

(dual transistors)

EMT18 / UMT18N / IMT18

Features

1) Two 2SA2018 chips in a EMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

3) Transistor elements are independent, eliminating

interference.

External dimensions

(Unit : mm)

(4)

(5)

(6)

(3)

(2)

0.13

1.2

1.6

(1)

Each lead has same dimensions

ROHM :

EMT6

Abbreviated symbol :

T18

0.65

1.3

0.65

0.7

0.95 0.95

0.8

Structure

Epitaxial planar type

NPN silicon transistor

(4)

UMT18N

0.2

(3)

0.5

0.5 0.5

1.0

1.6

0.22

EMT18

(6)

1.25

2.1

0.15

(1)

The following characteristics apply to both Tr

and Tr

ROHM : UMT6

EIAJ : SC-88

0.1Min.

Each lead has same dimensions

Abbreviated symbol :

T18

(6)

Equivalent circuit

EMT18 / UMT18N

(3)

(2)

(1)

IMT18

0.3

(1)

0.9

IMT18

(4)

(5)

(6)

0.15

(4)

(5)

1.6

2.8

(3)

(2)

0.3Min.

Each lead has same dimensions

(4)

(5)

(6)

(3)

(2)

(1)

ROHM : SMT6

EIAJ : SC-74

JEDEC : SOT-457

Abbreviated symbol :

T18

Absolute maximum ratings

(Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Limits

Symbol

CBO

−15

CEO

−12

EBO

−6

−500

∗1

1.0

EMT6

∗2

150 (TOTAL)

UMT6

SMT6 300 (TOTAL)

∗3

150

Tstg

−55

+150

Unit

°C

Power dissipation

Junction temperature

Storage temperature

∗1

Single pulse P

=1ms

∗2

120mW per element must not be exceeded.

∗3

200mW per element must not be exceeded.

Rev.A

1.1

1.9

2.9

2.0

(5)

(2)

1/3

EMT18 / UMT18N / IMT18

Transistors

Electrical characteristics

(Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

CBO

−15

−

V I

= −10µA

−

V I

= −1mA

Collector-emitter breakdown voltage BV

CEO

−12

Emitter-base breakdown voltage

EBO

−6

−

V I

= −10µA

Collector cutoff current

CBO

−

−0.1 µA

= −15V

Emitter cutoff current

EBO

−

−0.1 µA

= −6V

Collector-emitter saturation voltage V

CE (sat)

−

−100 −250

mV I

/ I

= −200mA

−10mA

= −2V,

= −10mA

DC current transfer ratio

270

−

680

−

Transition frequency

−

260

−

MHz V

= −2V,

=10mA,

f=100MHz

Output capacitance

Cob

−

6.5

−

pF V

= −10V,

=0A,

f=1MHz

Packaging specifications and h

Type

EMT18

UMT18N

IMT18

Package name

Code

Basic ordering unit (pieces)

T2R

8000

−

Taping

3000

−

T110

3000

−

Electrical characteristic curves

1000

=2V

1000

500

200

100

Ta=125°C

Ta=25°C

Ta=

−40°C

=2V

1000

500

/ I

=20

COLLECTOR CURRENT : I

(mA)

500

COLLECTOR SATURATION

VOLTAGE : V

CE (sat)

(V)

DC CURRENT GAIN : h

200

100

Ta=125°C

Ta=25°C

Ta=

−40°C

200

100

Ta=125°C

Ta=25°C

Ta=

−40°C

0.5

1.0

1.5

10 20

50 100 200

500 1000

10 20

50 100 200

500 1000

BASE TO EMITTER VOLTAGE : V

(V)

COLLECTOR CURRENT : I

(mA)

COLLECTOR CURRENT : I

(mA)

Fig.1 Grounded Emitter Propagation

Characteristics

Fig.2 DC Current Gain vs.

Collector Current

Fig.3 Collector-Emitter Saturation

Voltage vs.

Collector Current

(Ι)

Rev.A

2/3

EMT18 / UMT18N / IMT18

Transistors

BASER SATURATION VOLTAGE : V

BE (sat)

(mV)

1000

500

200

100

10 20

50 100 200

500 1000

Ta=

−40°C

Ta=25°C

Ta=125°C

TRANSITION FREQUENCY : f

(MHz)

Ta=25°C

1000

/ I

=20

1000

500

200

100

10 20

=2V

Ta=25°C

COLLECTOR SATURATION

VOLTAGE : V

CE (sat)

(mV)

200

100

10 20

50 100 200

500 1000

/ I

=50

/ I

=20

/ I

=10

50 100 200

500 1000

COLLECTOR CURRENT : I

(mA)

COLLECTOR CURRENT : I

(mA)

EMITTER CURRENT : I

(mA)

Fig.4 Collector-Emitter Saturation

Voltage vs.

Collector Current

(ΙΙ)

Fig.5 Base-Emitter Saturation

Voltage vs.Collecter Current

Fig.6 Gain Bandwidth Product vs.

Emitter Current

EMITTER INPUT CAPACITANCE :

Cib (pF)

COLLECTOR OUTPUT CAPACITANCE :

Cob (pF)

1000

500

200

100

0.1 0.2

0.5

Cob

Cib

=0A

f=1MHz

Ta=25°C

10 20

50 100

EMITTER TO BASE VOLTAGE : V

(V)

Fig.7 Collector Output Capacitance vs.

Collector-Base Voltage

Emitter Input Capacitance vs.

Emitter-Base Voltage

Rev.A

3/3

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

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UMT18NTR Related Products

	UMT18NTR	UMT18NTN
Description	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, SC-88, 6 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, UMT6, SC-88, 6 PIN
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	ROHM Semiconductor	ROHM Semiconductor
Parts packaging code	SC-88	SC-88
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Contacts	6	6
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	12 V	12 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	270	270
JESD-30 code	R-PDSO-G6	R-PDSO-G6
JESD-609 code	e2	e2
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	6	6
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.15 W	0.15 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Copper (Sn/Cu)	Tin/Copper (Sn/Cu)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	10	10
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	260 MHz	260 MHz

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