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UMT18NTN

Description
Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, UMT6, SC-88, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size65KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance  
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UMT18NTN Overview

Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, UMT6, SC-88, 6 PIN

UMT18NTN Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-88
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage12 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)270
JESD-30 codeR-PDSO-G6
JESD-609 codee2
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)260 MHz

UMT18NTN Preview

EMT18 / UMT18N / IMT18
Transistors
General purpose transistors
(dual transistors)
EMT18 / UMT18N / IMT18
Features
1) Two 2SA2018 chips in a EMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
External dimensions
(Unit : mm)
(4)
(5)
(6)
(3)
(2)
0.13
1.2
1.6
(1)
Each lead has same dimensions
ROHM :
EMT6
Abbreviated symbol :
T18
0.65
1.3
0.65
0.7
0.95 0.95
0.8
Structure
Epitaxial planar type
NPN silicon transistor
(4)
UMT18N
0.2
(3)
0.5
0.5 0.5
1.0
1.6
0.22
EMT18
(6)
1.25
2.1
0.15
(1)
The following characteristics apply to both Tr
1
and Tr
2
.
ROHM : UMT6
EIAJ : SC-88
0.1Min.
Each lead has same dimensions
Abbreviated symbol :
T18
(6)
Equivalent circuit
EMT18 / UMT18N
(3)
(2)
(1)
IMT18
0.3
(1)
0.9
IMT18
(4)
(5)
(6)
0.15
(4)
(5)
1.6
2.8
(3)
(2)
Tr
1
Tr
2
Tr
2
Tr
1
0.3Min.
Each lead has same dimensions
(4)
(5)
(6)
(3)
(2)
(1)
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
Abbreviated symbol :
T18
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Limits
Symbol
V
CBO
−15
V
CEO
−12
V
EBO
−6
I
C
−500
∗1
I
CP
1.0
EMT6
∗2
150 (TOTAL)
P
C
UMT6
SMT6 300 (TOTAL)
∗3
Tj
150
Tstg
−55
to
+150
Unit
V
V
V
mA
A
mW
°C
°C
Power dissipation
Junction temperature
Storage temperature
∗1
Single pulse P
W
=1ms
∗2
120mW per element must not be exceeded.
∗3
200mW per element must not be exceeded.
Rev.A
1.1
1.9
2.9
2.0
(5)
(2)
1/3
EMT18 / UMT18N / IMT18
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BV
CBO
−15
V I
C
= −10µA
V I
C
= −1mA
Collector-emitter breakdown voltage BV
CEO
−12
Emitter-base breakdown voltage
BV
EBO
−6
V I
E
= −10µA
Collector cutoff current
I
CBO
−0.1 µA
V
CB
= −15V
Emitter cutoff current
I
EBO
−0.1 µA
V
CB
= −6V
Collector-emitter saturation voltage V
CE (sat)
−100 −250
mV I
C
/ I
B
= −200mA
/
−10mA
V
CE
= −2V,
I
C
= −10mA
DC current transfer ratio
h
FE
270
680
Transition frequency
f
T
260
MHz V
CE
= −2V,
I
E
=10mA,
f=100MHz
Output capacitance
Cob
6.5
pF V
CB
= −10V,
I
E
=0A,
f=1MHz
Packaging specifications and h
FE
Type
EMT18
UMT18N
IMT18
Package name
Code
Basic ordering unit (pieces)
T2R
8000
Taping
TR
3000
T110
3000
Electrical characteristic curves
1000
V
CE
=2V
1000
500
200
100
50
20
10
5
2
Ta=125°C
Ta=25°C
Ta=
−40°C
V
CE
=2V
1000
500
I
C
/ I
B
=20
COLLECTOR CURRENT : I
C
(mA)
500
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(V)
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
0
Ta=125°C
Ta=25°C
Ta=
−40°C
200
100
50
20
10
5
2
Ta=125°C
Ta=25°C
Ta=
−40°C
0.5
1.0
1.5
1
1
2
5
10 20
50 100 200
500 1000
1
1
2
5
10 20
50 100 200
500 1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.2 DC Current Gain vs.
Collector Current
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current
(Ι)
Rev.A
2/3
EMT18 / UMT18N / IMT18
Transistors
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
1000
500
500
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
Ta=
−40°C
Ta=25°C
Ta=125°C
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25°C
1000
I
C
/ I
B
=20
1000
500
200
100
50
20
10
5
2
1
1
2
5
10 20
V
CE
=2V
Ta=25°C
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(mV)
200
100
50
20
10
5
2
1
1
2
5
10 20
50 100 200
500 1000
I
C
/ I
B
=50
I
C
/ I
B
=20
I
C
/ I
B
=10
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
C
(mA)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current
(ΙΙ)
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
Fig.6 Gain Bandwidth Product vs.
Emitter Current
EMITTER INPUT CAPACITANCE :
Cib (pF)
COLLECTOR OUTPUT CAPACITANCE :
Cob (pF)
1000
500
200
100
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
Cob
Cib
I
E
=0A
f=1MHz
Ta=25°C
10 20
50 100
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

UMT18NTN Related Products

UMT18NTN UMT18NTR
Description Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, UMT6, SC-88, 6 PIN Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 2-Element, PNP, Silicon, SC-88, 6 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor
Parts packaging code SC-88 SC-88
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 12 V 12 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 270 270
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e2 e2
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.15 W 0.15 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Copper (Sn/Cu) Tin/Copper (Sn/Cu)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 10 10
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 260 MHz 260 MHz

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