UZVNL120GTA datasheet, PDF - EEWORLD Datasheet

UZVNL120GTA: DescriptionPower Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size76KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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UZVNL120GTA Overview

Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Parameter Name	Attribute value
Maker	Diodes
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.32 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	2 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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