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PDM44036S8TQ

Description
Cache SRAM, 32KX36, 8ns, CMOS, PQFP100
Categorystorage    storage   
File Size563KB,12 Pages
ManufacturerParadigm Technology Inc
Download Datasheet Parametric View All

PDM44036S8TQ Overview

Cache SRAM, 32KX36, 8ns, CMOS, PQFP100

PDM44036S8TQ Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerParadigm Technology Inc
package instructionQFP, QFP100,.63X.87
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time8 ns
Other featuresSELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
memory density1179648 bit
Memory IC TypeCACHE SRAM
memory width36
Number of functions1
Number of ports1
Number of terminals100
word count32768 words
character code32000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX36
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3/5,5 V
Certification statusNot Qualified
Maximum standby current0.11 A
Minimum standby current4.75 V
Maximum slew rate0.46 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED

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