PDM44056S20TQ datasheet, PDF - EEWORLD Datasheet

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PDM44056S20TQ: DescriptionCache SRAM, 32KX36, 9ns, CMOS, PQFP100; Categorystorage storage; File Size532KB，11 Pages; ManufacturerParadigm Technology Inc

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PDM44056S20TQ Overview

Cache SRAM, 32KX36, 9ns, CMOS, PQFP100

PDM44056S20TQ Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Paradigm Technology Inc
package instruction	QFP, QFP100,.63X.87
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	9 ns
Other features	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
memory density	1179648 bit
Memory IC Type	CACHE SRAM
memory width	36
Number of functions	1
Number of ports	1
Number of terminals	100
word count	32768 words
character code	32000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX36
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	QFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3/5,5 V
Certification status	Not Qualified
Maximum standby current	0.07 A
Minimum standby current	4.75 V
Maximum slew rate	0.38 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED

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PDM44056S20TQ Related Products

	PDM44056S20TQ	PDM44056S10TQ	PDM44056S12TQ	PDM44056S12TQI	PDM44056S15TQ	PDM44056S15TQI	PDM44056S20TQI
Description	Cache SRAM, 32KX36, 9ns, CMOS, PQFP100	Cache SRAM, 32KX36, 5ns, CMOS, PQFP100	Cache SRAM, 32KX36, 6ns, CMOS, PQFP100	Cache SRAM, 32KX36, 6ns, CMOS, PQFP100	Cache SRAM, 32KX36, 7ns, CMOS, PQFP100	Cache SRAM, 32KX36, 7ns, CMOS, PQFP100	Cache SRAM, 32KX36, 9ns, CMOS, PQFP100
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc
package instruction	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	9 ns	5 ns	6 ns	6 ns	7 ns	7 ns	9 ns
Other features	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE	BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
memory density	1179648 bit	1179648 bit	1179648 bit	1179648 bit	1179648 bit	1179648 bit	1179648 bit
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	36	36	36	36	36	36	36
Number of functions	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1
Number of terminals	100	100	100	100	100	100	100
word count	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000	32000	32000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	85 °C	70 °C	85 °C	85 °C
organize	32KX36	32KX36	32KX36	32KX36	32KX36	32KX36	32KX36
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES	YES	YES	YES
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QFP	QFP	QFP	QFP	QFP	QFP	QFP
Encapsulate equivalent code	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Minimum standby current	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
Maximum supply voltage (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum standby current	0.07 A	0.1 A	0.09 A	-	0.08 A	-	-
Maximum slew rate	0.38 mA	0.44 mA	0.42 mA	-	0.4 mA	-	-

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