Cache SRAM, 32KX36, 6ns, CMOS, PQFP100
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Paradigm Technology Inc |
| package instruction | QFP, QFP100,.63X.87 |
| Reach Compliance Code | unknown |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 6 ns |
| Other features | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE |
| I/O type | COMMON |
| JESD-30 code | R-PQFP-G100 |
| JESD-609 code | e0 |
| memory density | 1179648 bit |
| Memory IC Type | CACHE SRAM |
| memory width | 36 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 100 |
| word count | 32768 words |
| character code | 32000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 32KX36 |
| Output characteristics | 3-STATE |
| Exportable | YES |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | QFP |
| Encapsulate equivalent code | QFP100,.63X.87 |
| Package shape | RECTANGULAR |
| Package form | FLATPACK |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 3.3/5,5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.09 A |
| Minimum standby current | 4.75 V |
| Maximum slew rate | 0.42 mA |
| Maximum supply voltage (Vsup) | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal pitch | 0.635 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| PDM44066S12TQ | PDM44066S20TQ | PDM44066S20TQI | PDM44066S15TQ | PDM44066S15TQI | PDM44066S10TQ | PDM44066S12TQI | |
|---|---|---|---|---|---|---|---|
| Description | Cache SRAM, 32KX36, 6ns, CMOS, PQFP100 | Cache SRAM, 32KX36, 9ns, CMOS, PQFP100 | Cache SRAM, 32KX36, 9ns, CMOS, PQFP100 | Cache SRAM, 32KX36, 7ns, CMOS, PQFP100 | Cache SRAM, 32KX36, 7ns, CMOS, PQFP100 | Cache SRAM, 32KX36, 5ns, CMOS, PQFP100 | Cache SRAM, 32KX36, 6ns, CMOS, PQFP100 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc |
| package instruction | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| Maximum access time | 6 ns | 9 ns | 9 ns | 7 ns | 7 ns | 5 ns | 6 ns |
| Other features | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE | SELF TIMED WRITE CYCLE; LINEAR BURST; BYTE WRITE |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 1179648 bit | 1179648 bit | 1179648 bit | 1179648 bit | 1179648 bit | 1179648 bit | 1179648 bit |
| Memory IC Type | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| memory width | 36 | 36 | 36 | 36 | 36 | 36 | 36 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| word count | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| character code | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 85 °C | 70 °C | 85 °C | 70 °C | 85 °C |
| organize | 32KX36 | 32KX36 | 32KX36 | 32KX36 | 32KX36 | 32KX36 | 32KX36 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Exportable | YES | YES | YES | YES | YES | YES | YES |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | QFP | QFP | QFP | QFP | QFP | QFP | QFP |
| Encapsulate equivalent code | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| power supply | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Minimum standby current | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
| Maximum supply voltage (Vsup) | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | YES | YES | YES | YES | YES | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal pitch | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm |
| Terminal location | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maximum standby current | 0.09 A | 0.07 A | - | 0.08 A | - | 0.1 A | - |
| Maximum slew rate | 0.42 mA | 0.38 mA | - | 0.4 mA | - | 0.44 mA | - |
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