PDM44659S14J datasheet, PDF - EEWORLD Datasheet

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PDM44659S14J: DescriptionCache SRAM, 32KX9, 14ns, CMOS, PQCC44; Categorystorage storage; File Size502KB，10 Pages; ManufacturerParadigm Technology Inc

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PDM44659S14J Overview

Cache SRAM, 32KX9, 14ns, CMOS, PQCC44

PDM44659S14J Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Paradigm Technology Inc
package instruction	QCCJ, LDCC44,.7SQ
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	14 ns
Other features	OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST
I/O type	COMMON
JESD-30 code	S-PQCC-J44
JESD-609 code	e0
memory density	294912 bit
Memory IC Type	CACHE SRAM
memory width	9
Number of functions	1
Number of ports	1
Number of terminals	44
word count	32768 words
character code	32000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX9
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC44,.7SQ
Package shape	SQUARE
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3/5,5 V
Certification status	Not Qualified
Maximum standby current	0.06 A
Maximum slew rate	0.18 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED

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PDM44659S14J Related Products

	PDM44659S14J	PDM44659L14J	PDM44659L9J	PDM44659S10J	PDM44659S12J	PDM44659S9J	PDM44659L10J	PDM44659L12J
Description	Cache SRAM, 32KX9, 14ns, CMOS, PQCC44	Cache SRAM, 32KX9, 14ns, CMOS, PQCC44	Cache SRAM, 32KX9, 9ns, CMOS, PQCC44	Cache SRAM, 32KX9, 10ns, CMOS, PQCC44	Cache SRAM, 32KX9, 12ns, CMOS, PQCC44	Cache SRAM, 32KX9, 9ns, CMOS, PQCC44	Cache SRAM, 32KX9, 10ns, CMOS, PQCC44	Cache SRAM, 32KX9, 12ns, CMOS, PQCC44
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc	Paradigm Technology Inc
package instruction	QCCJ, LDCC44,.7SQ	QCCJ, LDCC44,.7SQ	QCCJ, LDCC44,.7SQ	QCCJ, LDCC44,.7SQ	QCCJ, LDCC44,.7SQ	QCCJ, LDCC44,.7SQ	QCCJ, LDCC44,.7SQ	QCCJ, LDCC44,.7SQ
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	14 ns	14 ns	9 ns	10 ns	12 ns	9 ns	10 ns	12 ns
Other features	OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST	OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST	OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST	OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST	OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST	OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST	OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST	OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	S-PQCC-J44	S-PQCC-J44	S-PQCC-J44	S-PQCC-J44	S-PQCC-J44	S-PQCC-J44	S-PQCC-J44	S-PQCC-J44
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
memory density	294912 bit	294912 bit	294912 bit	294912 bit	294912 bit	294912 bit	294912 bit	294912 bi
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	9	9	9	9	9	9	9	9
Number of functions	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1
Number of terminals	44	44	44	44	44	44	44	44
word count	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000	32000	32000	32000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32KX9	32KX9	32KX9	32KX9	32KX9	32KX9	32KX9	32KX9
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES	YES	YES	YES	YES
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ
Encapsulate equivalent code	LDCC44,.7SQ	LDCC44,.7SQ	LDCC44,.7SQ	LDCC44,.7SQ	LDCC44,.7SQ	LDCC44,.7SQ	LDCC44,.7SQ	LDCC44,.7SQ
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V	3.3/5,5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.06 A	0.05 A	0.08 A	0.08 A	0.07 A	0.09 A	0.07 A	0.06 A
Maximum slew rate	0.18 mA	0.17 mA	0.23 mA	0.22 mA	0.2 mA	0.24 mA	0.21 mA	0.19 mA
Maximum supply voltage (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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