Cache SRAM, 32KX9, 12ns, CMOS, PQCC44
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Paradigm Technology Inc |
| package instruction | QCCJ, LDCC44,.7SQ |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 12 ns |
| Other features | OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST |
| I/O type | COMMON |
| JESD-30 code | S-PQCC-J44 |
| JESD-609 code | e0 |
| memory density | 294912 bit |
| Memory IC Type | CACHE SRAM |
| memory width | 9 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 44 |
| word count | 32768 words |
| character code | 32000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 32KX9 |
| Output characteristics | 3-STATE |
| Exportable | YES |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | QCCJ |
| Encapsulate equivalent code | LDCC44,.7SQ |
| Package shape | SQUARE |
| Package form | CHIP CARRIER |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 3.3/5,5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.07 A |
| Maximum slew rate | 0.2 mA |
| Maximum supply voltage (Vsup) | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | J BEND |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| PDM44659S12J | PDM44659L14J | PDM44659L9J | PDM44659S10J | PDM44659S14J | PDM44659S9J | PDM44659L10J | PDM44659L12J | |
|---|---|---|---|---|---|---|---|---|
| Description | Cache SRAM, 32KX9, 12ns, CMOS, PQCC44 | Cache SRAM, 32KX9, 14ns, CMOS, PQCC44 | Cache SRAM, 32KX9, 9ns, CMOS, PQCC44 | Cache SRAM, 32KX9, 10ns, CMOS, PQCC44 | Cache SRAM, 32KX9, 14ns, CMOS, PQCC44 | Cache SRAM, 32KX9, 9ns, CMOS, PQCC44 | Cache SRAM, 32KX9, 10ns, CMOS, PQCC44 | Cache SRAM, 32KX9, 12ns, CMOS, PQCC44 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc | Paradigm Technology Inc |
| package instruction | QCCJ, LDCC44,.7SQ | QCCJ, LDCC44,.7SQ | QCCJ, LDCC44,.7SQ | QCCJ, LDCC44,.7SQ | QCCJ, LDCC44,.7SQ | QCCJ, LDCC44,.7SQ | QCCJ, LDCC44,.7SQ | QCCJ, LDCC44,.7SQ |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum access time | 12 ns | 14 ns | 9 ns | 10 ns | 14 ns | 9 ns | 10 ns | 12 ns |
| Other features | OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST | OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST | OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST | OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST | OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST | OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST | OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST | OUTPUT BUFFER SUPPLY VOLTAGE 5V+/-10% OR 3.3V+/-10%; SELF TIMED WRITE CYCLE; LINEAR BURST |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | S-PQCC-J44 | S-PQCC-J44 | S-PQCC-J44 | S-PQCC-J44 | S-PQCC-J44 | S-PQCC-J44 | S-PQCC-J44 | S-PQCC-J44 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 294912 bit | 294912 bit | 294912 bit | 294912 bit | 294912 bit | 294912 bit | 294912 bit | 294912 bi |
| Memory IC Type | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| memory width | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 44 | 44 | 44 | 44 | 44 | 44 | 44 | 44 |
| word count | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| character code | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 32KX9 | 32KX9 | 32KX9 | 32KX9 | 32KX9 | 32KX9 | 32KX9 | 32KX9 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Exportable | YES | YES | YES | YES | YES | YES | YES | YES |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ | QCCJ |
| Encapsulate equivalent code | LDCC44,.7SQ | LDCC44,.7SQ | LDCC44,.7SQ | LDCC44,.7SQ | LDCC44,.7SQ | LDCC44,.7SQ | LDCC44,.7SQ | LDCC44,.7SQ |
| Package shape | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| Package form | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| power supply | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V | 3.3/5,5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum standby current | 0.07 A | 0.05 A | 0.08 A | 0.08 A | 0.06 A | 0.09 A | 0.07 A | 0.06 A |
| Maximum slew rate | 0.2 mA | 0.17 mA | 0.23 mA | 0.22 mA | 0.18 mA | 0.24 mA | 0.21 mA | 0.19 mA |
| Maximum supply voltage (Vsup) | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V |
| Minimum supply voltage (Vsup) | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | YES | YES | YES | YES | YES | YES | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND |
| Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| Terminal location | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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